JAN2N3867S-Transistor Overview
The JAN2N3867S is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. Engineered to meet military standards, this transistor offers enhanced reliability and robust electrical characteristics suitable for demanding industrial environments. With its durable TO-39 metal can package, it ensures excellent thermal dissipation and mechanical stability. The device??s high collector current and voltage ratings make it ideal for use in power amplifier stages, audio drivers, and general-purpose switching circuits. Backed by rigorous testing protocols, the JAN2N3867S is a dependable choice for engineers and sourcing specialists seeking consistent performance and long-term durability in semiconductor components. For detailed sourcing and support, visit IC Manufacturer.
JAN2N3867S-Transistor Key Features
- High collector current capability: Supports up to 8 Amps, enabling robust power handling in amplifier and switching circuits.
- Collector-Emitter voltage rating of 60V: Ensures reliable operation under moderate voltage conditions common in industrial applications.
- Low saturation voltage: Minimizes power loss and improves efficiency during switching operations.
- TO-39 metal can package: Provides superior thermal conductivity and mechanical durability for extended device lifespan.
- Military-grade JAN specification: Guarantees stringent quality and reliability standards for critical applications.
- High transition frequency (fT): Supports faster switching speeds for enhanced signal amplification.
- Complementary to 2N3867: Facilitates balanced push-pull amplifier designs and simplifies circuit integration.
JAN2N3867S-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor type | NPN Bipolar Junction | |
| Collector-Emitter Voltage (Vceo) | 60 | Volts |
| Collector Current (Ic) | 8 | Amps |
| Power Dissipation (Pc) | 30 | Watts |
| Transition Frequency (fT) | 50 | MHz |
| Gain Bandwidth Product | Not specified | |
| Package Type | TO-39 Metal Can | |
| DC Current Gain (hFE) | 40 – 160 | |
| Collector-Base Voltage (Vcbo) | 80 | Volts |
| Emitter-Base Voltage (Vebo) | 7 | Volts |
JAN2N3867S-Transistor Advantages vs Typical Alternatives
This transistor stands out for its strong combination of high current and voltage ratings, making it more capable than many standard small-signal transistors. Its military-grade JAN certification ensures superior reliability and consistency, which is critical in aerospace and defense applications. The TO-39 metal package offers better thermal performance compared to plastic encapsulated devices, reducing failure rates under high power loads. These factors collectively result in enhanced operational stability, longer lifecycle, and improved efficiency in power amplification and switching tasks.
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Typical Applications
- Power amplifier stages in audio and RF circuits, where high current and gain ensure clear signal amplification and efficient power delivery.
- General-purpose switching circuits requiring dependable switching performance and thermal resilience under load.
- Industrial control systems that demand rugged transistor components able to withstand harsh conditions and maintain stable operation.
- Military and aerospace electronics benefiting from the device??s JAN certification and robust packaging for mission-critical reliability.
JAN2N3867S-Transistor Brand Info
The JAN2N3867S transistor is produced under strict military standards by a reputable semiconductor manufacturer known for delivering high-reliability components. The JAN (Joint Army-Navy) designation reflects compliance with rigorous testing and quality assurance protocols, making this product suitable for defense and aerospace sectors. Its consistent performance and durability have established it as a trusted choice in the industrial electronics and power amplification markets. Engineers and sourcing specialists rely on this transistor for projects demanding dependable power handling and thermal management.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum continuous collector current of 8 Amps, allowing it to handle substantial loads in power amplifier and switching applications without degradation.
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What type of packaging does this transistor use, and why is it beneficial?
It uses a TO-39 metal can package, which provides excellent heat dissipation and mechanical robustness, enhancing reliability especially under high power or thermally demanding conditions.
Is this transistor suitable for high-frequency applications?
The device has a transition frequency (fT) of approximately 50 MHz, making it suitable for moderate-frequency amplification tasks such as audio and some RF circuits.
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What does the JAN designation signify for this transistor?
JAN indicates the transistor meets military standards established by the Joint Army-Navy, ensuring rigorous quality, reliability, and performance for mission-critical applications.
Can this transistor be used in switching applications?
Yes, its low saturation voltage and high current capability make it well-suited for general-purpose switching circuits, providing efficient and reliable on/off control in industrial and military electronics.
