JAN2N3867P-Transistor-PIND Overview
The JAN2N3867P-Transistor-PIND is a high-performance PNP bipolar junction transistor designed for robust amplification and switching applications in industrial and military-grade electronics. Featuring a durable PIND package, it ensures reliable operation under harsh environmental conditions, including temperature extremes and mechanical stress. This transistor offers excellent gain characteristics and high collector current capacity, making it suitable for precision analog circuits and power control systems. Sourced from a reputable IC Manufacturer, it meets stringent standards for quality and consistency, ideal for engineers and sourcing specialists seeking dependable semiconductor components.
JAN2N3867P-Transistor-PIND Key Features
- High current handling: Supports collector currents up to 1.5A, enabling efficient power amplification and switching without thermal overload risks.
- PNP transistor configuration: Facilitates complementary circuit design and ease of integration in analog and digital systems.
- Robust PIND package: Provides enhanced mechanical stability and thermal dissipation, improving long-term reliability in challenging industrial environments.
- Low noise operation: Ideal for signal amplification where signal integrity is critical, ensuring minimal distortion and high accuracy.
JAN2N3867P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector Current (Ic) | 1.5 A (max) |
| Collector-Emitter Voltage (Vceo) | 60 V (max) |
| DC Current Gain (hFE) | 30 to 100 (typical range) |
| Power Dissipation (Pd) | 12.5 W (max) |
| Transition Frequency (fT) | 80 MHz (typical) |
| Package Type | PIND Metal Can |
| Operating Temperature Range | -55??C to +125??C |
JAN2N3867P-Transistor-PIND Advantages vs Typical Alternatives
This PNP transistor offers superior current capacity and thermal handling compared to common alternatives in plastic or epoxy packages. Its PIND metal can packaging enhances mechanical and thermal reliability, making it preferable for demanding aerospace, military, and industrial applications. The device??s stable gain and low noise characteristics provide more precise signal amplification, ensuring dependable performance where accuracy and ruggedness are critical.
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Typical Applications
- High-reliability analog amplification circuits requiring stable gain and low noise, such as audio preamplifiers and sensor signal conditioning.
- Power switching in industrial control systems where robust current handling and thermal endurance are necessary.
- Military and aerospace electronics benefiting from the PIND package??s enhanced environmental robustness and long-term reliability.
- Complementary transistor pairs in linear regulators and driver stages, leveraging the PNP configuration for efficient circuit design.
JAN2N3867P-Transistor-PIND Brand Info
The JAN2N3867P-Transistor-PIND is part of a legacy series of semiconductor devices produced under the JAN (Joint Army-Navy) specification, indicating compliance with rigorous military standards for quality and performance. This transistor is manufactured by a trusted IC Manufacturer known for delivering components that meet stringent reliability and environmental criteria. The PIND metal can package underscores the brand??s commitment to rugged and dependable device solutions for high-end industrial and defense markets.
FAQ
What does the PIND package signify for this transistor?
The PIND package refers to a hermetically sealed metal can design that provides superior mechanical protection and thermal dissipation. This packaging is preferred in military and aerospace applications because it enhances device reliability under extreme temperature, vibration, and humidity conditions.
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Can this transistor be used in high-frequency applications?
With a typical transition frequency (fT) of approximately 80 MHz, this transistor is suitable for moderately high-frequency analog circuits. While not intended for RF applications beyond the VHF range, it performs well in audio and intermediate frequency stages.
What is the maximum power dissipation for the device?
The maximum power dissipation rating is 12.5 watts, which indicates the maximum amount of power the transistor can safely dissipate without damage. Proper heat sinking and thermal management are necessary to maintain operation within this limit.
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Is the device suitable for military and aerospace use?
Yes, the JAN2N3867P-Transistor-PIND complies with military-grade JAN specifications and features a PIND package, making it suitable for demanding military and aerospace environments that require high reliability and environmental resistance.
How does the DC current gain of this transistor affect its application?
The DC current gain (hFE) range of 30 to 100 allows for flexible amplification levels in circuit design. This gain range supports a balance between power amplification and linearity, making it effective for both switching and analog signal processing tasks.
