JAN2N3867-Transistor by JAN | High-Power Amplification | TO-39 Package

  • Operates as a high-frequency transistor, enabling efficient signal amplification in electronic circuits.
  • Offers robust current handling capacity, ensuring stable performance under variable electrical loads.
  • The compact package design supports easy integration, saving valuable board space in tight assemblies.
  • Ideal for use in RF amplifiers, improving signal clarity and strength in communication devices.
  • Manufactured to meet stringent quality standards, promoting long-term reliability and consistent operation.
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产品上方询盘

JAN2N3867-Transistor Overview

The JAN2N3867 transistor is a high-performance NPN bipolar junction transistor designed for medium to high power applications. It features a robust collector-to-emitter voltage rating and a substantial collector current capacity, making it suitable for switching and amplification tasks in industrial and military environments. The transistor??s JAN (Joint Army-Navy) designation indicates compliance with rigorous military specifications, ensuring reliable operation under harsh conditions. Its robust construction supports superior thermal stability and durability, ideal for engineers and sourcing specialists requiring dependable components. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N3867-Transistor Key Features

  • High voltage handling: With a collector-to-emitter voltage up to 60V, it enables operation in demanding power circuits without risk of breakdown.
  • Elevated collector current: Supports continuous collector currents up to 4A, allowing efficient handling of moderate power loads in switching and amplification.
  • Military-grade reliability: JAN qualification ensures strict adherence to quality and environmental standards, enhancing component longevity and performance in critical applications.
  • Low saturation voltage: Facilitates efficient switching with minimal power loss, improving overall circuit efficiency and thermal management.

JAN2N3867-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)60V
Collector-Base Voltage (VCBO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)4A
Power Dissipation (Ptot)30W
Transition Frequency (fT)70MHz
DC Current Gain (hFE)40?C160??
Junction Temperature (TJ)200??C

JAN2N3867-Transistor Advantages vs Typical Alternatives

This transistor offers a reliable combination of high voltage and current ratings, coupled with military-grade qualification, distinguishing it from typical commercial alternatives. Its low saturation voltage improves efficiency, while its broad gain range provides design flexibility. The rugged construction and thermal tolerance ensure stable operation in demanding environments, making it a superior choice for engineers prioritizing durability and performance in critical power-switching and amplification roles.

Typical Applications

  • Power amplification in medium to high power audio and RF circuits, leveraging the transistor??s ability to handle elevated currents and voltages with stable gain performance.
  • Switching regulator output stages where efficient power handling and thermal stability are essential for sustained operation.
  • Industrial motor control circuits requiring reliable and robust switching under varying load conditions.
  • Military communication equipment benefiting from the device??s JAN certification ensuring operational reliability under extreme environmental stresses.

JAN2N3867-Transistor Brand Info

The JAN2N3867 transistor is produced under stringent military standards, reflecting the Joint Army-Navy (JAN) certification for high reliability and quality. Manufactured by established semiconductor companies specializing in defense-grade components, this transistor is tailored for applications demanding exceptional durability and precision. The JAN prefix indicates rigorous testing for temperature, mechanical shock, and electrical stress, making this device highly trusted in aerospace, defense, and industrial sectors where failure is not an option.

FAQ

What is the maximum voltage rating of this transistor?

The transistor supports a maximum collector-to-emitter voltage of 60V, which allows it to operate safely in circuits with moderate to high voltage requirements without risk of damage.

Can this transistor handle high current loads continuously?

Yes, it can handle continuous collector currents up to 4A, making it suitable for medium power applications such as power amplifiers and switching regulators where sustained current is necessary.

What does the JAN designation mean for this transistor?

The JAN (Joint Army-Navy) designation signifies that the transistor meets military specifications for reliability, quality, and environmental endurance, including testing for temperature range, vibration, and shock resistance.

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产品中间询盘

Is this device suitable for RF applications?

With a transition frequency of approximately 70 MHz, this transistor can be used in RF applications within this frequency range, including certain communication and amplification circuits requiring moderate frequency response.

How does the transistor??s power dissipation affect its use?

The device has a maximum power dissipation rating of 30W, which defines the thermal limits during operation. Proper heat sinking and thermal management are required to ensure reliable performance and avoid overheating in power-intensive applications.

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