JAN2N3810U-Dual-Transistor by JAN – High-Performance Amplifier, TO-39 Metal Can Package

JAN2N3810U-Dual-Transistor Overview

The JAN2N3810U-Dual-Transistor is a high-performance, complementary bipolar junction transistor (BJT) pair designed for industrial and military-grade applications. Featuring matched NPN transistors within a single package, this device offers reliable switching and amplification capabilities with enhanced thermal stability and low leakage currents. It is engineered to meet stringent JAN (Joint Army-Navy) standards, ensuring durability and consistent operation under harsh environmental conditions. Ideal for use in precision analog circuits, signal processing, and amplification stages, this dual transistor provides engineers and sourcing specialists with a robust solution for demanding electronic designs. For detailed procurement support and datasheets, visit IC Manufacturer.

JAN2N3810U-Dual-Transistor Key Features

• Matched NPN transistor pair: Ensures consistent gain and performance for differential amplifier configurations and precision signal processing.
• High voltage and current ratings: Supports up to 80 V collector-emitter voltage, allowing use in high-voltage switching and amplification circuits.
• Low leakage currents: Minimizes power loss and enhances overall circuit efficiency, particularly in low-noise applications.
• Military-grade JAN certification: Guarantees strict quality control, thermal robustness, and reliability in extreme temperature ranges and rugged environments.

JAN2N3810U-Dual-Transistor Technical Specifications

JAN2N3810U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers enhanced matching of transistor pairs compared to discrete alternatives, improving linearity and reducing offset in analog circuits. Its military-grade JAN certification ensures superior reliability and stable performance over wide temperature extremes, outperforming commercial-grade transistors in harsh environments. Additionally, the compact TO-18 packaging facilitates efficient thermal dissipation and integration into space-constrained designs, making it an advantageous choice for precision industrial and defense applications.

Typical Applications

• Precision differential amplifiers and signal conditioning circuits requiring closely matched transistor pairs for accurate gain and offset control.
• High-voltage switching applications where reliable operation at up to 80 V collector-emitter voltage is necessary.
• Analog signal processing modules demanding low leakage currents and stable gain across temperature ranges.
• Military and aerospace electronics where ruggedness and compliance with JAN standards are critical for system reliability.

JAN2N3810U-Dual-Transistor Brand Info

The JAN2N3810U dual transistor is a product rigorously manufactured under the Joint Army-Navy (JAN) qualification standards, ensuring high reliability, performance, and quality control. This device is part of a family of transistors designed to meet the strict requirements of defense and industrial systems. The brand emphasizes robust construction, precision matching, and consistent electrical characteristics that comply with military specifications, making it a trusted component for engineers designing mission-critical electronic systems.

FAQ

What is the maximum collector-emitter voltage rating of the JAN2N3810U dual transistor?

The maximum collector-emitter voltage rating for this dual transistor is 80 volts. This allows it to be used in applications involving moderately high voltage switching or amplification without risk of breakdown.

How does the JAN certification benefit the reliability of this transistor?

JAN certification ensures that the transistor has undergone rigorous testing and meets military-grade quality standards. This guarantees enhanced performance under extreme temperature ranges and harsh environmental conditions, improving overall reliability in critical applications.

What type of package does the JAN2N3810U transistor use?

This device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical robustness. The compact metal can design makes it suitable for applications requiring reliable thermal management and durability.

Can this transistor be used for low-noise analog applications?

Yes, the transistor features low leakage currents and matched pairs, making it well-suited for low-noise analog circuits such as precision amplifiers and signal conditioning modules where minimal distortion and noise are critical.

What is the typical DC current gain range for this dual transistor?

The DC current gain (hFE) typically ranges from 40 to 160, allowing designers to select devices that meet their specific gain requirements for amplification and switching tasks in electronic circuits.