JAN2N3767-Transistor by JAN – High-Speed Switching Transistor, TO-126 Package

  • Acts as a semiconductor device controlling current flow, enabling efficient signal amplification or switching.
  • Features a voltage rating suitable for various circuits, ensuring dependable operation under standard electrical conditions.
  • Designed in a compact package that optimizes board space and supports streamlined device integration.
  • Ideal for use in power regulation circuits, improving system stability and responsiveness in electronic devices.
  • Manufactured to meet consistent quality standards, providing reliable performance throughout its operational life.
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JAN2N3767-Transistor Overview

The JAN2N3767 is a high-power NPN transistor designed for robust switching and amplification applications. This device offers a maximum collector-emitter voltage of 100V and a collector current rating of up to 10A, making it suitable for demanding industrial environments. Its rugged construction supports high power dissipation and provides reliable operation under elevated temperatures. With a gain bandwidth product conducive to medium-frequency applications, it is ideal for use in power amplifiers, motor control circuits, and other high-current switching roles. The JAN2N3767-Transistor is manufactured by IC Manufacturer, ensuring stringent quality standards for mission-critical electronics.

JAN2N3767-Transistor Key Features

  • High collector current capacity: Rated at 10A, it supports high load currents essential for power switching and amplification.
  • High voltage tolerance: With a collector-emitter voltage rating of 100V, it handles high-voltage circuits reliably.
  • Robust power dissipation: Supports up to 115W power dissipation, enhancing thermal management and operational reliability.
  • Medium gain bandwidth: Suitable for switching frequencies up to 2.5 MHz, enabling efficient operation in various industrial control systems.

JAN2N3767-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)120V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)10A
Power Dissipation (PD)115W
Gain Bandwidth Product (fT)2.5MHz
DC Current Gain (hFE)20-70Typ.
Junction Temperature (TJ)200??C

JAN2N3767-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced current handling and voltage tolerance compared to typical small-signal transistors, making it highly suitable for power-intensive applications. Its high power dissipation rating ensures better thermal stability and reliability in industrial environments. The combination of medium gain bandwidth and robust construction provides a balance between switching speed and durability, setting it apart from standard transistors with lower power ratings or reduced voltage capabilities.

Typical Applications

  • Power amplifier stages in industrial audio or RF equipment requiring high current and voltage capability.
  • Motor control circuits where reliable switching of high current loads is essential.
  • Power supply regulation and switching, including DC-DC converters and voltage regulators.
  • Industrial automation systems demanding rugged transistors for switching and amplification tasks.

JAN2N3767-Transistor Brand Info

The JAN2N3767 transistor is part of a legacy line of military-grade and industrial semiconductors known for durability and precision performance. Manufactured under stringent quality controls, this device meets military specifications that ensure reliability in harsh operating conditions. Its design emphasizes robustness and longevity, making it a preferred choice for engineers requiring dependable transistors in power switching and amplification applications.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for the JAN2N3767 transistor is 10 amperes. This high current rating enables it to handle demanding loads in power amplification and switching circuits without compromising reliability.

Can this transistor operate at high voltages?

Yes, it can handle collector-emitter voltages up to 100 volts and collector-base voltages up to 120 volts, making it suitable for high-voltage industrial and military applications.

What is the typical power dissipation capability?

The device supports power dissipation up to 115 watts, allowing it to operate efficiently with adequate thermal management in high-power conditions.

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What frequency range is this transistor suitable for?

With a gain bandwidth product of approximately 2.5 MHz, the transistor is optimized for medium-frequency applications, balancing switching speed and power handling.

What applications benefit most from using this transistor?

This transistor is ideal for power amplifiers, motor control circuits, power supplies, and industrial automation systems that require high current, voltage tolerance, and robust performance under demanding conditions.

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