The JAN2N3765U4 transistor is a robust NPN bipolar junction transistor designed for high-voltage switching and amplification applications. With a maximum collector-emitter voltage of 100V and a collector current rating up to 10A, this device supports demanding industrial and military-grade environments. Its rugged construction ensures reliable operation under elevated temperatures and high power dissipation conditions, making it suitable for power amplifier stages, switching regulators, and general-purpose amplification. Engineered for durability and consistent performance, this transistor is sourced from a trusted supplier, ensuring compliance with stringent quality standards. For detailed technical support and procurement, visit IC Manufacturer.
JAN2N3765U4-Transistor Technical Specifications
Parameter
Specification
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
100 V
Collector-Base Voltage (VCBO)
120 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
10 A
Power Dissipation (PD)
125 W (at 25??C)
DC Current Gain (hFE)
30 to 70
Transition Frequency (fT)
6 MHz (typical)
Operating Junction Temperature (TJ)
-65??C to +200??C
JAN2N3765U4-Transistor Key Features
High Voltage Capability: Supports collector-emitter voltages up to 100 V, enabling use in high-voltage switching circuits and power amplifiers.
High Collector Current: Rated for continuous collector currents up to 10 A, allowing handling of substantial loads without overheating.
Wide Operating Temperature Range: Reliable operation between -65??C and +200??C suits harsh industrial and military environments.
Robust Power Dissipation: With a maximum power dissipation of 125 W, it ensures stable performance under heavy power conditions.
Moderate Gain and Frequency Response: DC current gain between 30 and 70 with a transition frequency around 6 MHz balances amplification and switching speed.
Typical Applications
Power amplifier stages in industrial and audio systems where high current and voltage handling are essential for signal amplification.
Switching regulators and power converters requiring rugged transistors capable of handling transient voltages and high currents.
General-purpose amplification in control systems, instrumentation, and military electronics demanding reliable performance under extreme conditions.
Load switching in automotive and aerospace applications where durability and thermal stability are critical.
JAN2N3765U4-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced voltage and current ratings compared to many standard NPN BJTs, providing superior reliability in high-power applications. Its extended temperature range and robust power dissipation capacity make it ideal for industrial and military-grade electronics where thermal and electrical stresses are significant. The balance of gain and frequency response ensures efficient amplification without compromising switching speed, delivering precise control and consistent operation across demanding environments.
The JAN2N3765U4 transistor is manufactured under the JAN (Joint Army-Navy) standard, which signifies military-grade quality and reliability. This device adheres to rigorous testing and screening processes to meet strict MIL-SPEC requirements. Typically produced by established semiconductor manufacturers specializing in defense and industrial components, it is intended for applications that demand high dependability and performance consistency. The JAN marking assures engineers and sourcing specialists of the product??s compliance with stringent military standards, making it a trusted choice for mission-critical electronics.
