JAN2N3764L-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

JAN2N3764L-Transistor Overview

The JAN2N3764L is a high-power NPN bipolar junction transistor designed for robust switching and amplification applications. Featuring a high collector-emitter voltage and a substantial collector current capacity, it suits demanding industrial and military-grade environments. This transistor supports reliable operation under elevated temperatures and voltage stresses, making it ideal for power control circuits and audio frequency amplifiers. Its robust construction ensures consistent performance and durability in harsh conditions. For comprehensive sourcing and application support, visit IC Manufacturer.

JAN2N3764L-Transistor Technical Specifications

JAN2N3764L-Transistor Key Features

• High Voltage Tolerance: Supports collector-emitter voltages up to 100 V, enabling operation in high-voltage switching environments.
• High Collector Current Capacity: Can handle continuous collector currents up to 10 A, suitable for power amplification and control.
• Wide Gain Range: Provides a DC current gain between 40 and 160, allowing flexibility in amplification stages.
• Thermal Stability: Rated for junction temperatures up to 200??C, ensuring reliable performance under elevated thermal conditions.

Typical Applications

• Power switching circuits in industrial control systems that require high current and voltage handling capabilities for reliable operation.
• Audio frequency amplifiers where linear gain and power dissipation are critical for sound fidelity and robustness.
• Voltage regulation and power supply circuits demanding stable transistor performance under varying electrical stresses.
• Military and aerospace electronic systems that require rugged, high-reliability discrete components for mission-critical functions.

JAN2N3764L-Transistor Advantages vs Typical Alternatives

This transistor provides enhanced power handling with a 10 A collector current and up to 115 W power dissipation, outperforming many standard alternatives. Its high voltage tolerance and broad gain range offer improved design flexibility. The robust junction temperature rating ensures dependable operation in harsh environments, making it a superior choice for industrial and military applications requiring both reliability and durability.

JAN2N3764L-Transistor Brand Info

The JAN2N3764L transistor is a military-grade variant of the 2N3764 device, originally standardized by JEDEC and widely produced by reputable manufacturers specializing in high-reliability discrete semiconductors. The JAN prefix indicates compliance with Joint Army-Navy (JAN) specifications, reflecting stringent quality and performance standards for defense and aerospace usage. This product is typically sourced from manufacturers adhering to MIL-STD certifications, ensuring its suitability for critical electronic systems demanding long-term stability and ruggedness.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage (V_CEO) is 100 volts, allowing it to operate safely within high-voltage circuits without risk of breakdown under normal conditions.

How much continuous collector current can the transistor handle?

This