JAN2N3762U4-Transistor NPN Power Amplifier in TO-220 Package by JAN Semiconductor

JAN2N3762U4-Transistor Overview

The JAN2N3762U4 is a high-performance NPN bipolar junction transistor designed for reliable switching and amplification in industrial and military-grade applications. Featuring rugged construction and enhanced electrical characteristics, this transistor supports medium power handling with excellent gain and frequency response. Its robust design ensures consistent operation under varying environmental conditions, making it suitable for demanding circuits requiring stable current control. Engineers and sourcing specialists will appreciate its compatibility with standard transistor packages and its adherence to JAN quality standards for dependable performance. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N3762U4-Transistor Technical Specifications

JAN2N3762U4-Transistor Key Features

• High Voltage Capability: Supports collector-emitter voltages up to 100 V, enabling use in medium-power switching circuits requiring robust voltage tolerance.
• Substantial Collector Current: Handles continuous currents up to 4 A, ensuring suitability for power amplification and load driving applications.
• Wide Operating Temperature Range: Rated from -65??C to +200??C, providing reliable performance in harsh environments and military-grade systems.
• TO-66 Metal Can Package: Delivers excellent thermal dissipation and mechanical robustness, enhancing device reliability and lifespan in industrial applications.

Typical Applications

• Power amplifier stages in industrial control equipment, where stable gain and high current handling are critical for driving actuators and relays.
• Switching applications in high-voltage circuits, benefiting from the transistor??s voltage rating and rugged construction for reliable operation.
• Military and aerospace electronics requiring components with extended temperature range and enhanced mechanical durability.
• General-purpose amplification in audio or signal conditioning circuits where dependable linearity and gain stability are necessary.

JAN2N3762U4-Transistor Advantages vs Typical Alternatives

This transistor offers significant advantages over many general-purpose BJTs due to its high collector voltage rating and elevated current capacity. Its wide operating temperature range and metal can package provide superior thermal management and mechanical strength, enhancing reliability in industrial and military environments. Compared to plastic-encapsulated alternatives, it ensures longer service life and consistent performance under stress, making it a preferred choice for engineers seeking rugged, precise transistor solutions.

JAN2N3762U4-Transistor Brand Info

The JAN2N3762U4 transistor is a product line historically associated with military and aerospace-grade semiconductor components, originally specified under the Joint Army-Navy (JAN) requirements for quality and reliability. Manufactured by leading semiconductor suppliers specializing in high-reliability discrete devices, this transistor meets stringent industry standards for durability and performance. It is commonly sourced from reputable manufacturers who uphold JAN certification processes, ensuring traceability and compliance with defense and industrial application demands.

FAQ

What type of transistor is the JAN2N3762U4 and what are its main electrical characteristics?

The JAN2N3762U4 is an NPN bipolar junction transistor designed for medium power applications. It features a collector-emitter voltage rating of 100 V, a maximum collector current of 4 A, and a power dissipation of up to 30 W. Its DC current gain ranges typically between 40 and 160, suitable for amplification and switching tasks.

In what package is this transistor supplied, and why is it beneficial?

This transistor comes in a TO-66 metal can package, which offers excellent thermal conductivity and mechanical robustness.