JAN2N3739-Transistor NPN Power Amplifier Transistor in TO-126 Package by ON Semiconductor

JAN2N3739-Transistor Overview

The JAN2N3739 transistor is a high-power NPN bipolar junction transistor designed for robust switching and amplification applications in industrial electronics. Featuring a maximum collector current of 10A and a collector-emitter voltage rating of 100V, this device supports high-voltage, high-current loads with reliability. Its durable construction ensures consistent performance under demanding thermal and electrical conditions. The transistor is suitable for use in power switching circuits, motor control, and audio amplification. Available through IC Manufacturer, it is engineered to meet military and industrial standards, making it a preferred choice for engineers seeking dependable high-power transistor solutions.

JAN2N3739-Transistor Technical Specifications

JAN2N3739-Transistor Key Features

• High collector current capability: Supports up to 10A, enabling efficient switching of high-power loads in industrial circuits.
• Robust voltage ratings: Collector-emitter voltage of 100V allows operation in high-voltage environments without breakdown risk.
• Wide power dissipation range: With up to 115W power handling, it ensures thermal stability and reliability in demanding applications.
• Military-grade packaging: The TO-3 metal can package offers excellent thermal conductivity and mechanical durability for harsh environments.

Typical Applications

• Power switching in industrial motor controls, providing robust and reliable operation under high current demands and transient conditions.
• Amplification stages in audio and signal processing equipment requiring stable gain and high power capability.
• Voltage regulation and power supply circuits where high voltage and current handling are essential for system stability.
• General purpose switching applications in industrial automation and control systems that demand rugged transistor performance.

JAN2N3739-Transistor Advantages vs Typical Alternatives

This transistor offers superior current and voltage handling compared to many standard NPN transistors, making it ideal for high-power industrial applications. Its TO-3 package ensures enhanced heat dissipation and mechanical reliability, which typical plastic-encapsulated transistors may lack. The broad DC current gain range supports flexible circuit design, and its military-grade construction enhances long-term operational stability under harsh environmental conditions.

JAN2N3739-Transistor Brand Info

The JAN prefix indicates this transistor is qualified to military standards, originally produced by manufacturers specializing in high-reliability semiconductor devices. This device is typically sourced from established semiconductor suppliers known for rugged, high-performance discrete components. The transistor complies with MIL-STD specifications, ensuring consistent quality and durability in mission-critical applications. It is widely recognized in industrial and defense sectors for dependable operation in power electronics and control systems.

FAQ

What is the maximum collector current rating of this transistor?

The device supports a maximum collector current of 10 amperes, making it suitable for switching and amplification tasks requiring high current capability.

What package type does this transistor use, and why is it important?

It utilizes a TO-3 metal can package, which provides excellent thermal dissipation and mechanical protection, essential for maintaining performance in high-power and harsh environment applications.