JAN2N3737UB/TR Overview
The JAN2N3737UB/TR is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Engineered to meet stringent military and industrial standards, this transistor offers reliable operation in demanding environments. Featuring a high collector current capability and enhanced gain characteristics, it is well-suited for applications requiring efficient power handling and stable performance. Sourced and qualified for extended temperature ranges, this device ensures consistent functionality across a broad spectrum of industrial and defense-related uses. For more detailed technical support and procurement options, visit IC Manufacturer.
JAN2N3737UB/TR Key Features
- High Collector Current Capability: Supports collector currents up to 10 A, enabling effective handling of high power loads without compromising reliability.
- Enhanced DC Current Gain (hFE): Provides a gain range of 40 to 160, ensuring stable amplification and improved switching efficiency in various circuit designs.
- Wide Voltage Ratings: With a collector-emitter voltage rating of 80 V, it can operate safely in medium voltage applications, enhancing design flexibility.
- Military-Grade Qualification: Built to meet stringent JAN specifications, ensuring superior durability and performance under harsh environmental conditions.
JAN2N3737UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| DC Current Gain (hFE) | 40 to 160 | ?? |
| Power Dissipation (PTot) | 75 | W |
| Transition Frequency (fT) | 15 | MHz |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
JAN2N3737UB/TR Advantages vs Typical Alternatives
This transistor offers a combination of high current capacity and military-grade reliability that sets it apart from typical alternatives. Its wide voltage and temperature ratings enable operation in challenging environments where standard devices might fail. The enhanced current gain ensures efficient switching and amplification, improving overall circuit performance while reducing power loss. These features make it a preferred choice for engineers requiring durable, high-performance components for industrial and defense applications.
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Typical Applications
- Power amplification in industrial control systems, where reliable high-current switching is critical for operational stability and longevity.
- Military and aerospace electronics, benefiting from the transistor??s strict military qualification and extended temperature range.
- High-power switching circuits demanding efficient transistor operation under elevated voltages and currents.
- General-purpose amplification in ruggedized environments requiring consistent performance over wide temperature variations.
JAN2N3737UB/TR Brand Info
The JAN2N3737UB/TR is part of a product line that adheres to Joint Army-Navy (JAN) standards, reflecting a commitment to quality and reliability in demanding environments. This transistor is manufactured under strict quality controls to meet military specifications, ensuring consistent device performance and durability. The brand is widely recognized among engineers and sourcing specialists for delivering robust semiconductor solutions tailored for high-stress industrial and defense applications.
FAQ
What is the maximum collector current supported by the JAN2N3737UB/TR?
The device supports a maximum collector current of 10 amperes, allowing it to handle relatively high power loads effectively. This makes it suitable for applications requiring robust switching or power amplification.
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Can this transistor operate in extreme temperature environments?
Yes, it has an operating junction temperature range from -65??C up to +200??C, enabling reliable performance in harsh environmental conditions common to military and industrial applications.
What voltage ratings are specified for this transistor?
The collector-emitter voltage rating is 80 V, while the collector-base voltage rating is 100 V. The emitter-base voltage is rated at 5 V, ensuring safe operation within these limits.
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How does the DC current gain affect circuit performance?
The DC current gain (hFE) ranges from 40 to 160, providing stable amplification and efficient switching. This range helps improve circuit responsiveness and power efficiency in amplification and switching roles.
Is the JAN2N3737UB/TR suitable for aerospace applications?
Yes, the transistor??s JAN qualification and wide operating temperature range make it well suited for aerospace electronics, where reliability and performance under stress are critical.
