JAN2N3735L-Transistor by JAN – High-Power Switching Transistor, TO-247 Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its high voltage rating supports robust operation under demanding electrical conditions.
  • The compact package type ensures board-space savings and simplifies integration into tight layouts.
  • Ideal for power regulation tasks in automotive or industrial environments, enhancing system stability.
  • Manufactured with quality controls to ensure consistent performance and long-term reliability.
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产品上方询盘

JAN2N3735L-Transistor Overview

The JAN2N3735L transistor is a high-power NPN bipolar junction transistor designed for reliable switching and amplification in industrial and military-grade applications. It features a robust collector-emitter voltage rating and high continuous collector current, ensuring stable performance under demanding electrical conditions. This transistor is well-suited for power management, signal amplification, and control circuits where durability and consistency are critical. Manufactured to meet stringent standards, the JAN2N3735L ensures long-term reliability and enhanced thermal handling for engineers requiring dependable semiconductor components. For more details, visit IC Manufacturer.

JAN2N3735L-Transistor Key Features

  • High Voltage Capability: Supports a collector-emitter voltage up to 100 V, enabling operation in high-voltage switching and amplification circuits.
  • Robust Collector Current: Continuous collector current rating of 10 A allows handling of significant power loads without performance degradation.
  • Enhanced Thermal Stability: Designed with a maximum junction temperature of 200??C to maintain reliability under elevated temperature conditions.
  • Low Saturation Voltage: Minimizes power loss during switching, improving efficiency in power management applications.

JAN2N3735L-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 10 A
Base Current IB 5 A
Power Dissipation PD 150 W
Transition Frequency fT 3 MHz
Junction Temperature TJ 200 ??C

JAN2N3735L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling capabilities compared to many standard NPN devices, enabling more efficient power switching and amplification. Its high thermal tolerance and low saturation voltage reduce power losses and improve operational reliability in harsh environments. These advantages make it an optimal choice for engineers seeking durable components with consistent performance across a wide range of industrial applications.

Typical Applications

  • Power switching circuits requiring high voltage and current capacity with reliable thermal performance, such as motor drivers and industrial controllers.
  • Linear amplification stages in audio and RF equipment where low distortion and high gain are essential.
  • Voltage regulation and power management modules in industrial systems demanding robust semiconductor devices.
  • Military and aerospace electronic systems that require high-reliability transistors compliant with rigorous standards.

JAN2N3735L-Transistor Brand Info

The JAN2N3735L transistor is manufactured under military specifications, ensuring stringent quality and reliability standards suitable for defense and aerospace applications. The product line is recognized for its consistent performance under extreme electrical and environmental conditions. This transistor is part of a trusted series favored by engineers designing mission-critical systems where long-term operational stability and ruggedness are paramount.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a continuous collector current of up to 10 amperes, allowing it to handle significant load currents in power switching and amplification applications.

Can this transistor operate at high temperatures?

Yes, it is rated for a maximum junction temperature of 200??C, making it suitable for applications that experience elevated thermal conditions without compromising reliability.

What voltage levels can this transistor safely withstand?

This device can handle a collector-emitter voltage of up to 100 volts and a collector-base voltage of 120 volts, supporting a broad range of high-voltage industrial circuits.

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产品中间询盘

Is the transistor suitable for RF or high-frequency applications?

With a transition frequency of 3 MHz, this transistor is capable of functioning in moderate-frequency amplification roles, including certain RF and audio applications.

What packaging type is used for this transistor?

The transistor is typically supplied in a robust metal can package, providing excellent thermal dissipation and mechanical protection for demanding environments.

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