JAN2N3700UB-Transistor NPN Power Transistor in TO-225 Package by JAN Brand

  • Acts as a switching device to control electrical current flow, enhancing circuit efficiency and responsiveness.
  • Supports moderate voltage levels suitable for general-purpose amplification and switching tasks.
  • Features a compact package that conserves board space and simplifies integration in tight layouts.
  • Ideal for use in signal amplification within audio or sensor circuits, improving overall system performance.
  • Manufactured to meet standard quality controls, ensuring consistent operation and long-term reliability.
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JAN2N3700UB-Transistor Overview

The JAN2N3700UB transistor is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications. Featuring robust electrical characteristics and reliable switching capabilities, it supports medium power amplification and general-purpose switching functions. This transistor complies with stringent military standards, making it suitable for harsh environments where durability and consistent operation are critical. Its TO-92 package ensures easy integration into diverse circuit boards, while the device??s gain and voltage ratings provide flexibility for various electronic designs. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N3700UB-Transistor Key Features

  • High Collector-Emitter Voltage: Supports up to 60V, allowing use in circuits requiring moderate voltage handling without breakdown concerns.
  • Reliable Gain Performance: Current gain (hFE) typically ranges between 40 to 300, enabling effective amplification in signal processing applications.
  • Military-Grade Quality: Built to JAN (Joint Army-Navy) standards, ensuring enhanced reliability under extreme temperature and stress conditions.
  • Compact TO-92 Package: Facilitates straightforward PCB mounting and space-saving design in compact electronic assemblies.

JAN2N3700UB-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA
Power Dissipation (Ptot) 625 mW
Current Gain (hFE) 40 to 300
Transition Frequency (fT) 40 MHz
Package Type TO-92

JAN2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage handling and military-grade reliability compared to standard commercial transistors. Its wide current gain range ensures adaptability in amplification and switching tasks, while the TO-92 packaging balances ease of use with effective thermal management. The adherence to JAN standards guarantees superior performance in demanding environments, making it a preferred choice over typical transistors lacking certified durability and environmental resilience.

Typical Applications

  • Medium power switching circuits in industrial control systems requiring stable operation under elevated voltages and temperatures.
  • Signal amplification in communication devices where consistent gain and reliability are essential.
  • General-purpose amplification in audio preamplifiers and sensor interface designs.
  • Military and aerospace electronic modules demanding components with proven ruggedness and extended lifecycle.

JAN2N3700UB-Transistor Brand Info

This transistor carries the JAN (Joint Army-Navy) designation, indicating its manufacture to strict military quality standards. Products under this classification undergo rigorous testing and quality assurance to meet defense and aerospace sector requirements. The JAN2N3700UB exemplifies the brand??s commitment to delivering components that combine performance, reliability, and compliance for mission-critical applications. Engineers sourcing this transistor benefit from trusted quality and traceability inherent to the JAN series.

FAQ

What are the key electrical ratings of this transistor?

The transistor supports a maximum collector-emitter voltage of 60V, collector current up to 200mA, and power dissipation of 625mW. These ratings enable it to perform reliably in medium power switching and amplification roles without risk of electrical overstress in typical operating conditions.

How does the gain range affect its application?

The current gain (hFE) of 40 to 300 allows the transistor to amplify input signals effectively across a variety of circuits. This variability makes it suitable for both low-level signal amplification and higher power switching, providing flexibility to circuit designers.

What does the JAN grading signify for this transistor?

JAN grading ensures that the transistor meets military standards for quality, reliability, and environmental endurance. It undergoes extensive testing for temperature extremes, mechanical shock, and electrical performance, making it ideal for defense and aerospace applications.

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Is the TO-92 package suitable for high power applications?

The TO-92 package is compact and cost-effective but is best suited for medium power applications due to its limited thermal dissipation capability. For higher power requirements, additional heat sinking or alternative packaging might be necessary.

Can this transistor be used in high-frequency circuits?

With a transition frequency (fT) of approximately 40 MHz, this device can handle moderate frequency applications such as audio and low RF circuits. It is not optimized for very high-frequency RF amplification but performs well in general-purpose switching and amplification tasks.

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