JAN2N3700-Transistor Overview
The JAN2N3700 transistor is a high-performance NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It features a robust construction that supports collector currents up to 200 mA and a collector-emitter voltage rating of 60 V, making it suitable for a wide range of industrial and commercial electronic circuits. With a gain bandwidth product of 40 MHz, it delivers reliable signal amplification with minimal distortion. This transistor is ideal for use in analog signal processing, audio amplification, and general-purpose switching tasks. For detailed technical support and sourcing, visit IC Manufacturer.
JAN2N3700-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 625 mW |
| Current Gain (hFE) | 40 to 300 (depending on operating point) |
| Transition Frequency (fT) | 40 MHz |
| Package Type | TO-18 Metal Can |
JAN2N3700-Transistor Key Features
- High Voltage Handling: Supports collector-emitter voltages up to 60 V, enabling use in medium voltage amplification and switching circuits.
- Wide Current Range: Handles collector currents up to 200 mA, suitable for moderate power applications without thermal overstress.
- Good Frequency Response: Transition frequency of 40 MHz allows for effective amplification in audio and low RF frequency ranges.
- Robust TO-18 Package: Provides enhanced thermal dissipation and mechanical protection for reliable operation in industrial environments.
Typical Applications
- Signal amplification in audio preamplifiers and low-frequency amplifier stages, benefiting from its moderate gain and power handling.
- Switching applications in electronic control circuits where moderate voltage and current levels are required.
- General-purpose amplification tasks in instrumentation and measurement systems requiring stable transistor characteristics.
- Low power driver stages for relay and lamp control circuits in industrial automation.
JAN2N3700-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating, current capacity, and frequency response that makes it a reliable choice over typical low-power BJTs. Its robust metal TO-18 package improves thermal management and mechanical durability compared to plastic encapsulated alternatives. The wide gain range ensures adaptability to various circuit designs, enhancing sensitivity and operational accuracy. Overall, it provides dependable performance with consistent parameters, making it a preferred option for engineers seeking reliable switching and amplification in demanding industrial environments.
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JAN2N3700-Transistor Brand Info
The JAN prefix indicates this transistor is a military-grade device manufactured to stringent quality and reliability standards, often by legacy semiconductor companies such as Fairchild Semiconductor or ON Semiconductor. These components conform to Joint Army-Navy (JAN) certifications, assuring robust performance under harsh environmental conditions. This specific transistor variant is recognized for its long-term availability and consistent electrical characteristics, widely used in defense and aerospace applications as well as commercial industrial designs requiring elevated reliability levels.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current is rated at 200 mA, allowing it to handle moderate power levels suitable for amplification and switching without thermal damage when operated within specified limits.
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What type of package does this transistor use, and why is it important?
It is housed in a TO-18 metal can







