JAN2N3637UB-Transistor Overview
The JAN2N3637UB-Transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade electronic circuits. It features a robust junction breakdown voltage and a high current gain, supporting reliable operation in demanding environments. This device is engineered to meet strict quality and reliability standards, ensuring stable performance across temperature variations. Its TO-39 metal can package enhances thermal dissipation, making it suitable for applications requiring consistent power handling. For detailed sourcing and technical support, visit IC Manufacturer.
JAN2N3637UB-Transistor Key Features
- High voltage rating: The transistor offers a collector-emitter voltage (Vceo) of 80 V, enabling usage in circuits requiring robust voltage tolerance.
- Substantial current capacity: With a collector current (Ic) rating up to 1.5 A, it supports moderate power switching and amplification tasks efficiently.
- Reliable gain performance: Featuring a DC current gain (hFE) range from 40 to 160, the device ensures consistent amplification across varying operating points.
- Enhanced thermal management: The metal TO-39 package provides superior heat dissipation compared to plastic alternatives, improving reliability under continuous operation.
JAN2N3637UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 80 | V |
| Collector-Base Voltage (Vcbo) | 100 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 1.5 | A |
| Power Dissipation (Pc) | 1.0 | W |
| DC Current Gain (hFE) | 40 to 160 | (typical) |
| Transition Frequency (fT) | 100 | MHz |
| Operating Junction Temperature (Tj) | -65 to +200 | ??C |
JAN2N3637UB-Transistor Advantages vs Typical Alternatives
This transistor provides superior voltage tolerance and current handling compared to many standard BJTs, making it ideal for rugged and high-reliability industrial applications. Its broad hFE range ensures flexible gain control, while the metal TO-39 package enhances thermal stability and longevity. These attributes offer engineers enhanced precision and durability, enabling dependable performance where standard plastic-packaged transistors might fail.
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Typical Applications
- Switching circuits in industrial control systems, where reliable high voltage and current handling are essential for long-term operation.
- Signal amplification in analog electronic devices requiring stable gain over a wide temperature range.
- Power regulation modules in military and aerospace electronics that demand rugged and thermally efficient components.
- General-purpose transistor applications in automated test equipment and instrumentation where precision and durability are critical.
JAN2N3637UB-Transistor Brand Info
The JAN2N3637UB-Transistor is a precision-engineered component produced under stringent military and industrial standards. Its JAN (Joint Army-Navy) designation signifies compliance with rigorous quality and reliability criteria. This transistor is designed to deliver consistent electronic performance in harsh environments, making it a trusted choice for engineers sourcing long-lasting, high-reliability discrete semiconductors.
FAQ
What is the maximum voltage rating of this transistor?
The maximum collector-emitter voltage (Vceo) rating of this transistor is 80 volts. This allows it to operate safely in circuits with relatively high voltage demands without risk of breakdown.
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What type of package does this transistor use and why is it beneficial?
This device uses a metal TO-39 package, which provides enhanced thermal dissipation compared to plastic packages. This package helps to maintain junction temperature within safe limits during continuous operation, improving reliability and longevity.
What is the typical current gain range and its significance?
The transistor features a DC current gain (hFE) range from 40 to 160. This wide range allows for flexible amplification characteristics, enabling designers to optimize circuit performance across different operating conditions.
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Can this transistor operate at elevated temperatures?
Yes, it can operate within a junction temperature range from -65??C to +200??C, which makes it suitable for applications exposed to extreme environmental conditions.
What are common applications for this transistor in industrial electronics?
Common uses include switching and amplification in industrial control systems, power regulation in aerospace and military equipment, and signal processing in instrumentation and automated test devices.
