JAN2N3637-Transistor by JAN – High-Performance NPN Transistor, TO-39 Metal Can Package

JAN2N3637-Transistor Overview

The JAN2N3637 is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications requiring reliable switching and amplification. This transistor features a sturdy metal can package ensuring robust thermal management and durability in harsh environments. Its high voltage and current ratings make it suitable for demanding power amplification, signal processing, and switching circuits. With a focus on precision and consistency, the JAN2N3637 delivers dependable performance under stringent conditions. Engineers and sourcing specialists seeking a rugged, high-voltage transistor for critical systems will find this device ideal. More details are available at IC Manufacturer.

JAN2N3637-Transistor Key Features

• High collector-emitter voltage rating: Supports up to 100V, enabling use in high-voltage switching and amplification applications.
• Collector current capacity: Handles continuous currents up to 5A, providing strong drive capability for power stages.
• Metal can (TO-18) package: Enhances thermal dissipation and mechanical robustness, improving reliability in rugged environments.
• Gain bandwidth product: Offers sufficient frequency response for medium-frequency amplification tasks.

JAN2N3637-Transistor Technical Specifications

JAN2N3637-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage and current handling capabilities compared to many standard NPN transistors, providing superior reliability in high-power applications. Its metal can package improves thermal management and mechanical stability, which are critical in industrial and military environments. The wide gain range coupled with a solid frequency response delivers consistent amplification performance, making it a preferred choice over typical plastic-encapsulated alternatives.

Typical Applications

• Power amplification stages in industrial control systems where high voltage and current capabilities ensure robust signal processing and switching.
• Military and aerospace equipment requiring rugged, reliable transistors capable of operating under extreme environmental conditions.
• High-voltage switching circuits in power supplies and motor control applications.
• General-purpose amplification in audio and intermediate-frequency stages where moderate frequency response and gain stability are needed.

JAN2N3637-Transistor Brand Info

The JAN2N3637 transistor is a part of the JAN (Joint Army-Navy) series, recognized for its military-grade quality and reliability standards. Manufactured under strict quality controls, this transistor meets government specifications for performance and durability. It is designed to provide dependable operation in demanding applications, supporting mission-critical electronics with consistent electrical characteristics and robust packaging.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a continuous collector current of up to 5 amperes, making it suitable for applications requiring moderate to high current drive capability without sacrificing reliability.

Which package type does the JAN2N3637 utilize, and why is it important?

This transistor uses a TO-18 metal can package, which offers excellent thermal dissipation and mechanical protection. This packaging enhances durability and performance in harsh environments compared to common plastic packages.

What voltage levels can this transistor safely operate at?

The device supports a collector-emitter voltage up to 100 volts and a collector-base voltage up to 120 volts, allowing it to function safely in high-voltage circuits and power amplification stages.

How does the current gain (hFE) vary for this transistor?

The DC current gain ranges typically from 40 to 160, providing flexibility in circuit design by accommodating various amplification requirements while maintaining stable operation.

Is this transistor suitable for high-frequency applications?

With a transition frequency of approximately 15 MHz, this transistor is suitable for medium-frequency amplification but may not be optimal for very high-frequency RF applications. It works well in audio and intermediate-frequency circuits.