JAN2N3636-Transistor by JAN | High-Power Amplification | TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Operating at a high voltage rating ensures stable performance under demanding electrical conditions.
  • The compact CBZ package offers space-saving advantages on densely populated circuit boards.
  • Ideal for use in power management modules, it enhances energy efficiency and thermal handling.
  • Manufactured to meet strict quality standards, it provides consistent reliability over extended use.
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JAN2N3636-Transistor Overview

The JAN2N3636 is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. It features a robust construction meeting military standards (JAN), ensuring enhanced reliability and durability in demanding environments. This transistor supports collector currents up to 1.5A and voltages up to 100V, making it suitable for industrial and aerospace electronics. Its moderate gain and low saturation voltage enable efficient operation in linear and switching circuits. Engineers and sourcing specialists will appreciate the JAN2N3636’s consistent performance and rugged package, ideal for robust designs. For detailed specifications and sourcing options, visit IC Manufacturer.

JAN2N3636-Transistor Key Features

  • High Collector Current Capacity: Supports up to 1.5A, enabling efficient control of medium power loads.
  • Wide Voltage Range: With a collector-emitter voltage rating of 100V, it suits various industrial voltage levels.
  • Military-Grade Reliability: JAN (Joint Army-Navy) certification ensures performance stability under harsh environmental conditions.
  • Low Saturation Voltage: Minimizes power losses during switching, improving overall circuit efficiency.
  • TO-18 Metal Can Package: Provides excellent thermal dissipation and mechanical durability for long-term reliability.

JAN2N3636-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 1 W
DC Current Gain (hFE) 30?C70
Transition Frequency (fT) 20 MHz
Package Type TO-18

JAN2N3636-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability through its military-grade JAN certification, which is a distinguishing factor from commercial-grade alternatives. Its higher voltage and current ratings allow for broader application flexibility while maintaining low saturation voltage for efficient switching. The TO-18 metal package improves thermal management and durability, providing superior long-term stability compared to plastic-encapsulated types.

Typical Applications

  • Medium power amplification in aerospace and military communication systems where ruggedness and reliability are critical.
  • Switching applications in industrial control circuits requiring moderate current and voltage handling.
  • Signal amplification stages in instrumentation and measurement devices needing stable gain and low noise.
  • Driver stages for relays and solenoids where controlled switching and power dissipation are important.

JAN2N3636-Transistor Brand Info

The JAN2N3636 is produced under stringent quality controls conforming to Joint Army-Navy (JAN) standards, ensuring military-grade performance and reliability. This product is recognized for its robust construction and consistent electrical characteristics, making it a preferred choice in defense, aerospace, and industrial sectors. The brand emphasizes durability and proven performance, supporting mission-critical applications with reliable semiconductor components.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 1.5 amperes, making it suitable for medium power applications that require reliable current handling capability.

What package type does the JAN2N3636 use, and why is it beneficial?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical strength, enhancing reliability in demanding operating environments.

Can this transistor be used in high-frequency applications?

With a transition frequency of approximately 20 MHz, it is suitable for moderate frequency amplification and switching tasks but may not be ideal for very high-frequency circuits.

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What voltage ratings are specified for this device?

The collector-emitter voltage rating is 100 volts, collector-base voltage is 120 volts, and emitter-base voltage is 5 volts, enabling operation over a broad voltage range in various circuit designs.

How does the JAN certification impact the transistor??s reliability?

JAN certification indicates that the transistor meets military standards for quality and reliability, ensuring consistent performance under extreme temperature, vibration, and environmental stress conditions.

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