JAN2N3635UB/TR NPN Transistor by ON Semiconductor – TO-92 Package, High Gain

  • Provides efficient voltage regulation to maintain system stability and improve overall device performance.
  • Includes a high current rating to support demanding loads, ensuring consistent operation under varying conditions.
  • Features a compact package type that enables board-space savings and simplifies integration into tight circuit layouts.
  • Ideal for use in embedded systems where reliable power delivery enhances long-term operational efficiency.
  • Manufactured with quality controls to ensure durability and minimize failure rates during extended use.
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JAN2N3635UB/TR Overview

The JAN2N3635UB/TR is a high-reliability bipolar junction transistor designed for demanding industrial and military-grade applications. Featuring a robust design compliant with JAN standards, it delivers consistent performance under harsh environmental conditions. This device supports medium power amplification and switching tasks with reliable gain characteristics and a high voltage rating. Its military-grade construction ensures long-term durability and stable operation, making it suitable for defense, aerospace, and other critical systems. Sourced from a trusted IC Manufacturer, the transistor is supplied in a rugged TO-66 metal can package, facilitating effective thermal management and mechanical protection.

JAN2N3635UB/TR Key Features

  • High voltage capability: Supports up to 80V collector-emitter voltage, ensuring reliable operation in medium power circuits.
  • Robust gain characteristics: Offers a DC current gain (hFE) suitable for amplification and switching applications, enhancing circuit efficiency.
  • Military-grade JAN certification: Guarantees stringent quality and environmental standards with enhanced reliability for critical systems.
  • TO-66 metal can package: Provides superior thermal dissipation and mechanical stability compared to plastic encapsulation.

JAN2N3635UB/TR Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)80 V
Collector-Base Voltage (VCBO)100 V
Emitter-Base Voltage (VEBO)5 V
Collector Current (IC)3 A (max)
Power Dissipation (PD)30 W (max)
DC Current Gain (hFE)40 to 160 (varies by operating point)
Transition Frequency (fT)100 MHz (typical)
Package TypeTO-66 Metal Can

JAN2N3635UB/TR Advantages vs Typical Alternatives

This transistor stands out with its military-grade JAN certification, ensuring superior reliability and performance under extreme conditions compared to commercial-grade alternatives. Its higher voltage ratings and robust power dissipation capability enable more stable operation in demanding environments. The metal can package also offers enhanced thermal management and mechanical strength, making it ideal for applications where durability and long-term stability are critical.

Typical Applications

  • Medium power amplification in aerospace and defense electronic systems, where reliable gain and voltage handling are essential for mission-critical performance.
  • Switching applications in industrial control circuits requiring rugged, high-voltage transistors.
  • Power regulation circuits demanding stable operation under thermal stress and varying environmental conditions.
  • General-purpose amplification in communication equipment designed for harsh environments.

JAN2N3635UB/TR Brand Info

The JAN2N3635UB/TR is part of a family of JAN-certified semiconductors known for their military-grade reliability and stringent quality standards. This product is manufactured by a reputable IC Manufacturer specialized in high-performance transistors for industrial and defense sectors. The brand??s commitment to durability, precise electrical characteristics, and robust packaging ensures that this device meets rigorous requirements for critical applications.

FAQ

What are the key electrical ratings of the JAN2N3635UB/TR transistor?

This transistor features a maximum collector-emitter voltage of 80 V, collector-base voltage of 100 V, and a maximum collector current of 3 A. It supports up to 30 W of power dissipation, making it suitable for medium power applications requiring reliable operation.

How does the JAN certification affect the transistor??s reliability?

JAN certification means the device meets military-grade standards for quality, environmental stress, and durability. This results in enhanced reliability, stable performance over temperature extremes, and longer lifecycle compared to commercial-grade transistors.

What package type is used for this transistor and why is it important?

The transistor is housed in a TO-66 metal can package, which provides excellent thermal conductivity and mechanical protection. This helps maintain stable junction temperatures and ensures the device withstands harsh environmental conditions.

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Can this transistor be used for RF applications?

With a typical transition frequency around 100 MHz, this device can support certain RF and high-frequency applications, but it is primarily optimized for medium power amplification and switching in industrial and military systems.

What typical applications benefit most from using this transistor?

This transistor is ideal for aerospace, defense, industrial control, and communication equipment where reliable medium power amplification and switching are required under challenging environmental and electrical conditions.

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