JAN2N3635-Transistor by JAN – High-Power Switching Transistor, TO-220 Package

  • Amplifies electrical signals efficiently, enabling precise control in various electronic circuits.
  • Designed to handle significant current levels, ensuring stable performance under demanding loads.
  • Features a compact package that optimizes board space and simplifies integration into tight layouts.
  • Ideal for signal switching applications, improving responsiveness and reducing energy consumption.
  • Manufactured to meet stringent quality standards, promoting long-term operational reliability.
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产品上方询盘

JAN2N3635-Transistor Overview

The JAN2N3635 is a high-performance NPN bipolar junction transistor designed for medium to high-power switching and amplification applications. Featuring robust voltage and current handling capabilities, it supports collector currents up to 10A and collector-emitter voltages up to 100V. Its rugged construction and reliable switching characteristics make it suitable for demanding industrial environments, including power regulation and motor control circuits. This transistor offers consistent gain and saturation performance, ensuring efficient operation within power amplifier and driver stages. For precise sourcing and technical support, visit the IC Manufacturer website.

JAN2N3635-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling robust power handling in switching and amplification tasks.
  • Collector-emitter voltage rating of 100V: Ensures reliable operation in circuits requiring substantial voltage margins.
  • Low saturation voltage: Enhances switching efficiency, reducing power loss and heat generation in power stages.
  • Wide operating temperature range: Maintains performance stability under varying thermal conditions typical in industrial applications.

JAN2N3635-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 10 A
DC Current Gain (hFE) hFE 30 to 70 ??
Power Dissipation Ptot 80 W
Transition Frequency fT 15 MHz
Operating Junction Temperature Tj 150 ??C

JAN2N3635-Transistor Advantages vs Typical Alternatives

This transistor offers an optimal balance of high current capacity and voltage tolerance, outperforming many standard NPN devices in power efficiency and thermal reliability. Its low saturation voltage reduces conduction losses, making it ideal for power-switching applications where energy efficiency is critical. Compared to typical alternatives, it provides enhanced gain stability across temperature ranges and robust mechanical construction, ensuring long-term operational reliability in industrial environments.

Typical Applications

  • Power amplifier stages in audio and signal processing equipment, where high current and voltage handling improve output fidelity and reliability.
  • Motor control circuits requiring efficient switching of moderate to high currents for industrial automation systems.
  • Switching regulators and power supply designs that benefit from the transistor’s low saturation voltage and high power dissipation capabilities.
  • General-purpose amplification and switching roles in industrial control and instrumentation applications.

JAN2N3635-Transistor Brand Info

The JAN2N3635 is a military-grade transistor manufactured under strict quality and reliability standards. Designed for high-reliability applications, this product adheres to rigorous testing protocols to meet demanding specifications in aerospace, defense, and industrial sectors. Its performance consistency and durability underscore its suitability for mission-critical electronic systems where failure is not an option.

FAQ

What is the maximum collector current rating for this transistor?

This transistor is rated for a maximum continuous collector current of 10 amperes, making it suitable for high-power switching and amplification applications within this current range.

Can this transistor operate at high voltages?

Yes, it can handle collector-emitter voltages up to 100 volts and collector-base voltages up to 120 volts, allowing it to be used reliably in medium to high voltage circuits.

What is the typical DC current gain range?

The device offers a DC current gain (hFE) ranging from 30 to 70, which ensures adequate amplification capabilities for a variety of electronic circuit designs.

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产品中间询盘

Is the transistor suitable for high-temperature environments?

Yes, the transistor can operate at junction temperatures up to 150??C, providing stability and reliability in elevated temperature applications commonly found in industrial settings.

How does the low saturation voltage benefit circuit performance?

The low saturation voltage reduces power losses during switching operations, leading to improved energy efficiency and lower heat generation, which enhances overall system reliability and longevity.

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