JAN2N3585-Transistor NPN Power Amplifier Transistor in TO-126 Package by ON Semiconductor

JAN2N3585-Transistor Overview

The JAN2N3585 is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. Featuring a robust voltage rating and current capacity, it delivers reliable operation under demanding environmental conditions. Its rugged design supports high power handling and thermal stability, making it suitable for critical circuits requiring dependable performance. This transistor is commonly sourced for use in power management, signal processing, and control systems. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N3585-Transistor Technical Specifications

JAN2N3585-Transistor Key Features

• High Voltage Tolerance: Supports up to 100 V collector-emitter voltage, enabling use in high voltage switching and amplification circuits.
• Robust Current Handling: Handles collector currents up to 1.5 A, allowing for efficient power regulation in demanding applications.
• Wide DC Gain Range: Offers a current gain from 40 to 160, providing flexibility in circuit design for varied amplification needs.
• Durable Package Design: Encapsulated in a TO-18 metal can package, delivering excellent thermal dissipation and environmental resistance.

Typical Applications

• Power Amplification: Ideal for linear and switching amplifiers in industrial control systems requiring reliable high voltage operation with stable gain.
• Signal Switching: Suitable for signal switching in military and aerospace electronics where robustness and precision are critical.
• Power Regulation: Used in power supply circuits for voltage and current regulation due to its high power dissipation capability.
• Driver Circuits: Effective as a driver transistor in relay and solenoid control circuits, benefiting from its high current capacity and voltage tolerance.

JAN2N3585-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage and current handling compared to standard small-signal transistors, ensuring reliability in power-intensive circuits. Its metal can package improves thermal management and mechanical robustness, which is advantageous for harsh operating environments. The broad gain range supports versatile circuit configurations, enabling engineers to optimize performance without compromising stability or sensitivity.

JAN2N3585-Transistor Brand Info

The JAN2N3585 transistor is a military-grade component originally produced under stringent quality controls to meet military specifications (MIL-SPEC). Manufactured by established semiconductor producers specializing in defense and industrial-grade electronic components, it adheres to rigorous testing standards to ensure long-term reliability and durability. This transistor is widely respected in aerospace and defense industries for its proven performance and consistency in critical applications.

FAQ

What voltage ratings define the operational limits of this transistor?

The transistor supports a maximum collector-emitter voltage of 100 V, a collector-base voltage of 120 V, and an emitter-base voltage of 5 V. These ratings define the safe operating limits to prevent breakdown and ensure reliable switching and amplification.

Can this transistor handle high current loads continuously?

Yes, the device can handle collector currents up to 1.5 A continuously, making it suitable for power regulation and driver applications where sustained current flow is essential.

What packaging does the device use, and how does it impact performance?

The transistor is housed in a TO-18 metal can package, which provides superior thermal conductivity and mechanical protection. This packaging enhances reliability under thermal stress and rugged operating conditions.

What is the typical