JAN2N3507L-Transistor Overview
The JAN2N3507L is a high-performance PNP bipolar junction transistor (BJT) designed for robust industrial and military-grade applications. It features a complementary structure suitable for power amplification and switching operations, ensuring reliable performance under demanding conditions. With a collector-emitter voltage rating of 60V and a continuous collector current of up to 2A, this transistor supports moderate power handling with excellent gain characteristics. Its hermetically sealed metal can package enhances thermal stability and environmental resistance, making it ideal for aerospace, defense, and high-reliability electronics. For detailed sourcing and specifications, visit IC Manufacturer.
JAN2N3507L-Transistor Key Features
- High voltage rating: The device supports a collector-emitter voltage of 60V, enabling operation in medium voltage circuits with stable performance.
- Substantial collector current capability: With a maximum continuous current of 2A, it is well-suited for moderate power amplification and switching tasks.
- Hermetically sealed TO-39 package: Provides superior protection against moisture and contaminants, ensuring long-term reliability in harsh environments.
- Complementary transistor pair compatibility: Designed to complement the 2N3055 NPN transistor, facilitating balanced push-pull amplifier designs.
JAN2N3507L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (V_CEO) | 60 V |
| Collector-Base Voltage (V_CBO) | 80 V |
| Emitter-Base Voltage (V_EBO) | 5 V |
| Collector Current (I_C) | 2 A (continuous) |
| Power Dissipation (P_D) | 30 W (at 25??C) |
| DC Current Gain (h_FE) | 20 to 70 (varies with test conditions) |
| Transition Frequency (f_T) | 3 MHz (typical) |
| Package Type | Hermetically sealed TO-39 metal can |
| Operating Junction Temperature | -65??C to +200??C |
JAN2N3507L-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced environmental protection with its hermetically sealed metal can, superior to many plastic-encapsulated alternatives. Its ability to handle moderate currents and voltages while maintaining consistent gain makes it a reliable choice for applications requiring both power and precision. The extended operating temperature range and military-standard construction ensure durability and stability, providing an advantage in aerospace and defense electronics over commercial-grade components.
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Typical Applications
- Power amplifiers in audio and RF circuits where complementary transistor pairs are essential for balanced performance and efficiency.
- Switching devices in industrial control systems requiring reliable operation under temperature and voltage stress.
- Military and aerospace electronics demanding rugged, hermetically sealed components for harsh environments.
- Linear regulators and voltage stabilization circuits benefiting from stable gain and power handling characteristics.
JAN2N3507L-Transistor Brand Info
The JAN2N3507L belongs to a family of military-grade transistors known for their rigorous quality standards and reliability. The JAN prefix denotes compliance with Joint Army-Navy specifications, indicating suitability for defense and aerospace applications. Manufactured to meet stringent screening and testing procedures, this transistor ensures consistent performance, long lifecycle, and robust operation under extreme conditions. It is commonly trusted by engineers designing mission-critical and high-reliability systems.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current rating is 2 amperes. This allows the device to handle moderate power levels in amplification and switching applications without thermal or electrical stress exceeding specified limits.
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What type of package does this transistor use, and why is it important?
This transistor is housed in a hermetically sealed TO-39 metal can package. This packaging ensures protection against moisture, dust, and other contaminants, which is crucial for maintaining reliability in harsh or mission-critical environments.
Is this transistor suitable for high-frequency applications?
With a transition frequency (f_T) around 3 MHz, it is best suited for low to medium frequency applications such as audio amplifiers and power switching, rather than high-frequency RF designs.
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How does the JAN2N3507L compare to common commercial transistors?
Unlike many commercial transistors that come in plastic packages, this device offers military-grade construction and hermetic sealing. This results in superior reliability, wider operating temperature ranges, and better performance in demanding environments.
Can this transistor be used as a complementary pair with other devices?
Yes, it is designed as a complementary PNP transistor to match the 2N3055 NPN transistor, enabling efficient push-pull amplifier configurations and balanced circuit designs.
