The JAN2N3506U4 is a high-voltage PNP bipolar junction transistor designed for demanding industrial and power electronics applications. Engineered to deliver robust performance under rigorous conditions, this transistor supports collector-emitter voltages up to 350 V and collector currents reaching 8 A, making it ideal for switching and amplification tasks. Its rugged construction ensures reliability in military-grade and aerospace environments. Manufactured to meet stringent JAN standards, it offers enhanced durability and consistent electrical characteristics. The device is suitable for power regulators, amplifiers, and high-voltage switching circuits, providing engineers with a dependable, high-performance transistor solution. For more technical information, visit IC Manufacturer.
JAN2N3506U4-Transistor Technical Specifications
Parameter
Value
Unit
Type
PNP Bipolar Junction Transistor
??
Collector-Emitter Voltage (V_CEO)
350
V
Collector-Base Voltage (V_CBO)
400
V
Emitter-Base Voltage (V_EBO)
5
V
Collector Current (I_C)
8
A
Power Dissipation (P_TOT)
75
W
Gain Bandwidth Product (f_T)
6
MHz
DC Current Gain (h_FE)
20?C70
??
Operating Junction Temperature (T_J)
?65 to +200
??C
Package Type
TO-3
??
JAN2N3506U4-Transistor Key Features
High voltage rating: Supports collector-emitter voltages up to 350 V, enabling use in high-voltage power circuits without breakdown risk.
Robust collector current capacity: Handles up to 8 A collector current, ensuring suitability for medium-power switching and amplification tasks.
Wide operating temperature range: Operates reliably between ?65??C and +200??C, ideal for harsh environments and military applications.
High power dissipation: Rated for 75 W power dissipation, facilitating efficient heat management in power electronics designs.
JAN military standard compliance: Offers enhanced reliability and consistency for aerospace and defense applications.
TO-3 metal can package: Provides excellent thermal conductivity and mechanical stability for rugged industrial use.
Typical Applications
Power amplifiers in industrial control systems where high voltage and current handling are required for efficient signal boosting.
Switching regulators and DC-DC converters that demand reliable high-voltage transistors to maintain stable voltage regulation.
Motor control circuits benefiting from the transistor??s robust current capacity and thermal performance under load.
Military and aerospace electronics needing components that withstand extreme environmental conditions and provide long-term reliability.
JAN2N3506U4-Transistor Advantages vs Typical Alternatives
This transistor offers superior high-voltage and high-current handling compared to many standard PNP devices, enhancing system reliability in power and switching applications. Its wide operating temperature range and JAN certification ensure consistent performance under extreme environmental stresses, making it more dependable than typical commercial-grade transistors. The TO-3 package enables better heat dissipation and mechanical durability, which reduces failure rates and improves long-term operational efficiency.
The JAN2N3506U4 transistor is originally produced under the Joint Army-Navy (JAN) specification, ensuring military-grade quality and rigorous testing for reliability in critical applications. Typically manufactured by established semiconductor companies specializing in defense and industrial components, this device meets strict quality and performance standards. The JAN prefix designates compliance with MIL-PRF-19500 standards, commonly associated with brands that serve aerospace, defense, and high-reliability industrial markets. Its robust design and tested reliability make it a trusted choice for engineers sourcing durable transistors for demanding environments.
