JAN2N3506L-Transistor by JAN – High-Power NPN Transistor in TO-3 Package

  • This transistor acts as an electronic switch or amplifier, enabling effective control of current in circuits.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under load.
  • Its compact package design allows for efficient board space usage in dense electronic assemblies.
  • Ideal for signal amplification tasks, it enhances audio or sensor outputs with consistent performance.
  • Manufactured to meet standard quality protocols, it offers dependable operation in various environments.
Microchip Technology-logo
产品上方询盘

JAN2N3506L-Transistor Overview

The JAN2N3506L is a high-performance PNP bipolar junction transistor designed for robust switching and amplification in industrial and military-grade applications. Featuring a collector-emitter voltage rating of up to 100 V and a continuous collector current of 8 A, this device delivers reliable operation under demanding electrical conditions. Its complementary low saturation voltage and strong gain characteristics ensure efficient power handling and signal integrity. Engineered to meet JAN (Joint Army-Navy) standards, the transistor offers enhanced durability and consistency, making it ideal for critical electronic circuits. Available through IC Manufacturer, it supports demanding environments requiring dependable semiconductor components.

JAN2N3506L-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage (Vceo) rating of 100 V, it supports high-voltage switching and amplification tasks, ensuring versatility in power electronics.
  • Robust current handling: Rated for continuous collector current (Ic) of 8 A, it accommodates high-load applications without compromising reliability.
  • Low saturation voltage: Enables efficient switching with reduced power loss, improving overall circuit efficiency and thermal management.
  • Military-grade JAN certification: Guarantees stringent quality control, superior reliability, and extended operational lifespan under harsh conditions.

JAN2N3506L-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 100 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) Continuous 8 A
Power Dissipation (Pc) 115 W
DC Current Gain (hFE) 20-70 (at Ic=3A)
Transition Frequency (fT) 2.5 MHz
Operating Junction Temperature (Tj) -65 to +200 ??C

JAN2N3506L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard PNP transistors, ensuring better performance in high-power switching and amplification tasks. Its low saturation voltage reduces heat generation, enhancing efficiency. The JAN certification provides assurance of military-grade reliability and consistency, which typical commercial alternatives cannot guarantee. These advantages make it an excellent choice for engineers requiring both robustness and precision in demanding industrial or defense applications.

Typical Applications

  • Power amplifier stages in industrial control systems, where high voltage and current handling are critical for stable operation under load.
  • Switching regulators and power supplies that demand efficient transistor switching with minimal power loss.
  • Motor control circuits requiring reliable high-current switching and thermal endurance.
  • Military and aerospace electronic systems benefiting from JAN certification for enhanced component reliability.

JAN2N3506L-Transistor Brand Info

The JAN2N3506L is a military-standard transistor produced under the JAN (Joint Army-Navy) certification, reflecting rigorous testing and quality control protocols. This designation ensures the device meets strict performance and reliability criteria required by defense and aerospace sectors. The transistor is manufactured by reputable semiconductor suppliers specializing in high-reliability components for industrial and military applications, providing engineers and sourcing specialists with assured quality and traceability.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a continuous collector current of up to 8 A, allowing it to handle substantial load currents reliably in power amplifier and switching applications.

What voltage ratings are critical for using this transistor safely?

Key voltage ratings include a maximum collector-emitter voltage (Vceo) and collector-base voltage (Vcbo) of 100 V, and an emitter-base voltage (Vebo) of 5 V. Operating within these limits ensures device longevity and prevents breakdown.

How does the JAN certification affect reliability?

JAN certification indicates the transistor has undergone stringent military-grade testing for environmental stress, electrical performance, and durability, making it more reliable than commercial-grade components in harsh conditions.

📩 Contact Us

产品中间询盘

Can this transistor be used in high-frequency applications?

With a transition frequency (fT) of approximately 2.5 MHz, it is suitable for moderate-frequency power amplification and switching but may not be ideal for very high-frequency RF circuits.

What are typical operating temperature ranges for this device?

The transistor is rated for junction temperatures from -65??C to +200??C, supporting operation across a wide temperature range suitable for industrial and military environments.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?