JAN2N3506AL-Transistor by JAN – High Power NPN Transistor, TO-3 Package

  • This transistor controls current flow efficiently, enabling precise switching and amplification in circuits.
  • High voltage tolerance ensures stable operation under demanding electrical conditions, enhancing circuit durability.
  • The compact package design reduces board space, making it suitable for dense electronic assemblies.
  • Ideal for power regulation in automotive or industrial systems, improving overall energy management and safety.
  • Manufactured to meet strict quality standards, providing consistent performance and long-term reliability.
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JAN2N3506AL-Transistor Overview

The JAN2N3506AL is a high-performance PNP bipolar junction transistor designed for power amplification and switching applications. Featuring a robust collector current rating and high voltage tolerance, this transistor delivers reliable operation in demanding industrial and military-grade environments. Its complementary design and standardized JEDEC JAN (Joint Army-Navy) testing ensure enhanced quality and consistency for critical electronic systems. Ideal for use in power regulators, audio amplifiers, and general-purpose switching circuits, the JAN2N3506AL offers engineers a proven solution with stable gain and thermal reliability. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N3506AL-Transistor Key Features

  • High Collector-Emitter Voltage (VCEO) of 100V enables operation in high-voltage power circuits, ensuring reliability under demanding conditions.
  • Collector Current (IC) capability of 8A supports heavy load switching and power amplification with minimal distortion.
  • High DC Current Gain (hFE) ranging from 20 to 70 provides efficient signal amplification and improved circuit sensitivity.
  • Low Saturation Voltage (VCE(sat)) enhances switching efficiency, reducing power losses and improving overall system performance.
  • Robust JEDEC JAN Qualification guarantees military-grade reliability and quality assurance for critical applications.
  • TO-3 Metal Can Package offers excellent thermal dissipation, supporting stable performance under high power dissipation scenarios.
  • Complementary Device Compatibility with NPN types allows for flexible push-pull amplifier and complementary circuit designs.

JAN2N3506AL-Transistor Technical Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO100V
Collector-Base VoltageVCBO120V
Emitter-Base VoltageVEBO5V
Collector Current (Continuous)IC8A
Power DissipationPD115W
DC Current Gain (hFE)hFE20 to 70??
Transition FrequencyfT4MHz
Junction TemperatureTJ200??C

JAN2N3506AL-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical alternatives due to its high collector current capacity combined with a robust voltage rating, making it suitable for high-power and high-voltage applications. Its military-grade JAN qualification assures superior reliability and performance stability in harsh environments. Additionally, the TO-3 package enhances thermal management, reducing the risk of overheating and ensuring longer service life??critical factors that improve overall system durability and efficiency.

Typical Applications

  • Power Amplification: Utilized in audio and RF power amplifier circuits where high current and voltage handling are essential for clear, distortion-free signal output.
  • Switching Devices: Effective in high-current switching applications such as relay drivers and industrial control systems requiring fast, reliable transistor switching.
  • Voltage Regulation: Serves as a pass transistor in voltage regulators for stable power supply delivery in various electronic equipment.
  • Military and Aerospace Systems: Due to its JAN certification, it is ideal for use in defense and aerospace electronics, where component reliability is critical under extreme conditions.

JAN2N3506AL-Transistor Brand Info

The JAN2N3506AL is a product adhering to Joint Army-Navy (JAN) standards, representing a lineage of components rigorously tested for military and aerospace applications. This transistor is manufactured under strict quality control processes to meet or exceed JEDEC standards, ensuring dependable performance in mission-critical environments. Its design and testing guarantee that it upholds the highest levels of electrical stability, thermal endurance, and mechanical robustness expected by engineers and procurement specialists sourcing parts for high-reliability systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this transistor is rated at 8 amperes, allowing it to handle substantial load currents in power amplification and switching applications without degradation.

What type of package does this transistor come in and why is it important?

This device is housed in a TO-3 metal can package, known for its excellent heat dissipation capabilities. This packaging helps maintain thermal stability during high power operations, improving overall reliability and lifespan.

Can this transistor be used in high-voltage applications?

Yes, with a collector-emitter voltage rating of 100 volts and a collector-base voltage of 120 volts, it is well-suited for circuits requiring high-voltage tolerance, such as power regulators and industrial control systems.

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What does JAN qualification signify for this transistor?

JAN qualification means the transistor meets military-grade quality and reliability standards set by the Joint Army-Navy. This involves rigorous testing for performance consistency, environmental tolerance, and long-term durability.

Is this transistor suitable for audio amplifier circuits?

Absolutely. Its high current gain and power handling make it an excellent choice for audio amplifier stages, providing efficient and low-distortion amplification in both consumer and industrial audio equipment.

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