JAN2N3506-Transistor NPN Power Transistor in TO-126 Package ?C Motorola Semiconductor

JAN2N3506-Transistor Overview

The JAN2N3506 transistor is a high voltage, high power PNP bipolar junction transistor designed for robust performance in industrial and military-grade applications. Built to meet stringent JAN (Joint Army-Navy) standards, it provides reliable operation under demanding conditions with a collector-emitter voltage rating of up to 100V and continuous collector current capability of 8A. This transistor is favored for power amplification and switching tasks where durability and thermal stability are critical. Offered by IC Manufacturer, it ensures consistent functionality in power regulation, motor control, and amplifier circuits requiring high gain and ruggedness.

JAN2N3506-Transistor Technical Specifications

JAN2N3506-Transistor Key Features

• High voltage tolerance up to 100V: Allows operation in demanding power control circuits and industrial environments.
• Robust continuous collector current of 8A: Supports high current loads with reliable switching and amplification.
• Wide operating temperature range (-65??C to +200??C): Ensures stable performance in harsh thermal conditions common in military and industrial applications.
• TO-3 metal can package: Provides excellent thermal dissipation and mechanical durability for longevity and reliability.
• Moderate DC current gain (20-70): Offers predictable amplification suitable for linear and switching applications.
• Designed to meet JAN military standards: Guarantees quality, ruggedness, and traceability for defense and aerospace projects.

Typical Applications

• Power amplification stages in audio and industrial amplifier circuits requiring high current capability and thermal robustness.
• Switching devices in motor control circuits where high voltage and current handling are necessary for reliable operation.
• Voltage regulation and power supply systems in military or aerospace electronics, leveraging high reliability and stress tolerance.
• General-purpose high power transistor applications where ruggedness, stable gain, and high current capacity are key.

JAN2N3506-Transistor Advantages vs Typical Alternatives

This transistor stands out for its combination of high voltage rating and robust continuous current capacity, making it superior to many standard PNP transistors that may lack ruggedness or thermal endurance. Its JAN qualification ensures enhanced reliability and traceability for defense and aerospace sectors, where typical commercial transistors may fail. The TO-3 package further improves heat dissipation and mechanical stability compared to plastic encapsulated alternatives, supporting longer operational life in harsh environments.

JAN2N3506-Transistor Brand Info

The JAN2N3506 is a product originally standardized under military specifications, widely produced by established semiconductor manufacturers specializing in military and industrial-grade components. This transistor is part of a series compliant with Joint Army-Navy (JAN) standards, ensuring strict quality control and stringent testing for ruggedness. Brands offering this device emphasize reliability, traceability, and performance consistency suited for defense, aerospace, and heavy industrial applications. The JAN2N3506??s legacy and industry acceptance make it a trusted choice for engineers requiring tested and proven power transistor solutions.

FAQ

What is the maximum collector-emitter voltage rating for this power transistor?

The transistor is rated for a maximum collector-emitter