JAN2N3501UB-Transistor by JAN – High-Power NPN Transistor, TO-126 Package

JAN2N3501UB-Transistor Overview

The JAN2N3501UB is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. Built to meet stringent quality standards, this transistor offers robust current handling and voltage capabilities with low saturation voltage for efficient operation. Its durable construction ensures reliable performance under harsh environmental conditions, making it suitable for high-reliability applications. Engineers and sourcing specialists will find this device ideal for circuits demanding stability, durability, and consistent electrical characteristics. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N3501UB-Transistor Key Features

• High collector current capacity: Supports up to 8A, enabling efficient handling of substantial loads in power switching designs.
• Elevated collector-emitter voltage rating: Withstands up to 100V, allowing use in medium voltage applications without compromising reliability.
• Low collector-emitter saturation voltage: Minimizes power loss and heat generation, enhancing overall circuit efficiency.
• Military-grade quality: Ensures consistent performance and long-term reliability in rigorous environments.

JAN2N3501UB-Transistor Technical Specifications

JAN2N3501UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage ratings compared to similar NPN devices, making it suitable for demanding industrial and military applications. Its low saturation voltage reduces power loss, improving efficiency in switching circuits. The robust thermal rating and military-grade qualification ensure reliable operation where alternatives may fail, providing engineers with a dependable component for critical designs requiring long-term stability and performance.

Typical Applications

• Power amplification and switching in industrial control systems requiring reliable high-current transistor operation.
• Military and aerospace electronics benefiting from military-grade device qualification and extended temperature range.
• Motor control circuits where high collector current and voltage ratings are essential for performance and durability.
• High-power switching regulators and converters demanding efficient transistor switching with minimal losses.

JAN2N3501UB-Transistor Brand Info

This transistor is manufactured under the JAN (Joint Army-Navy) specification, signifying compliance with rigorous military standards for quality and reliability. JAN2N3501UB is part of a family of high-power transistors widely recognized in defense and industrial electronics sectors. Its brand reputation is built on consistent performance under extreme conditions, making it a trusted choice for engineers designing mission-critical systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating is 8 amperes, allowing the transistor to handle substantial load currents in power switching applications without damage.

Can this transistor operate at high temperatures?

Yes, it has an operating junction temperature range from -65??C up to +200??C, making it suitable for use in harsh environments and high-temperature applications.

What voltage levels can this transistor withstand?

The device can tolerate collector-emitter voltages up to 100 volts, enabling its use in medium-voltage circuits and providing ample margin for many industrial applications.

How does the low saturation voltage benefit circuit performance?

A low collector-emitter saturation voltage reduces power dissipation during switching, which increases overall efficiency and decreases heat generation in the circuit.

Is this transistor suitable for military applications?

Yes, it is manufactured to JAN military specifications, ensuring it meets stringent quality, reliability, and performance standards required for defense and aerospace systems.