JAN2N3501UB/TR NPN Transistor by JAN Brand ?C High-Speed Switching, TO-18 Package

JAN2N3501UB/TR Overview

The JAN2N3501UB/TR is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in demanding industrial and military-grade applications. Featuring a high collector-emitter voltage and current rating, this transistor delivers reliable operation under harsh environmental conditions, making it ideal for precision analog circuits and power management systems. Its JAN (Joint Army-Navy) specification ensures stringent quality and reliability standards. Available in a TO-18 metal can package, the device supports enhanced thermal dissipation and long-term stability. For sourcing and detailed technical support, visit IC Manufacturer.

JAN2N3501UB/TR Key Features

• High voltage capability: Collector-emitter voltage rating up to 60 V allows operation in medium-power switching circuits.
• Robust current handling: Collector current rating of up to 0.8 A supports a variety of load requirements in amplification stages.
• Military-grade reliability: JAN specification ensures rigorous testing and consistent performance in critical environments.
• Thermally efficient TO-18 package: Metal can housing enhances thermal conductivity, improving device longevity and stability.
• Low saturation voltage: Enables efficient switching with reduced power loss, critical for power-sensitive designs.
• High gain bandwidth product: Suitable for high-frequency applications up to several MHz, enabling versatile analog and switching use.

JAN2N3501UB/TR Technical Specifications

JAN2N3501UB/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal performance compared to typical commercial-grade alternatives due to its JAN military specification and TO-18 packaging. Its high voltage and current ratings combined with low saturation voltage enable efficient operation in power-sensitive circuits. The broad gain range and frequency response provide flexibility in amplification and switching roles, ensuring dependable performance in rugged industrial environments.

Typical Applications

• Industrial control systems requiring reliable medium-power switching and amplification with stable performance in harsh conditions.
• Military and aerospace electronics where compliance with JAN standards ensures operational safety and longevity.
• Signal amplification in analog circuits demanding high gain and frequency response up to 100 MHz.
• Power management modules that benefit from low saturation voltage and enhanced thermal dissipation.

JAN2N3501UB/TR Brand Info

The JAN2N3501UB/TR is produced under the JAN (Joint Army-Navy) standard, denoting a high-reliability transistor series built to meet rigorous military and aerospace quality requirements. This product line is recognized for its durability and precision, ensuring consistent operation under extreme environmental and electrical stress. The “TR” suffix indicates tape and reel packaging, facilitating automated assembly and efficient handling for high-volume manufacturing.

FAQ

What is the maximum operating temperature for this transistor?

The device supports a maximum junction temperature of +200??C, allowing it to function reliably in high-temperature environments typically encountered in industrial and military applications.

What package type is used for this transistor and what are its benefits?

This transistor is housed in a TO-18 metal can package, which offers superior thermal conductivity and mechanical robustness compared to plastic packages, enhancing device reliability and heat dissipation.

How does the JAN specification affect the quality of this transistor?

The JAN (Joint Army-Navy) specification ensures that the transistor undergoes stringent testing for electrical performance, environmental stress, and reliability, making it suitable for critical applications where failure is not an option.

What are the typical current and voltage limits for this transistor?

The transistor supports a collector current up to 0.8 A and collector-emitter voltage up to 60 V, making it suitable for medium-power applications requiring robust switching and amplification.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (f_T) of approximately 100 MHz, this transistor is capable of operating effectively in high-frequency analog and switching circuits.