JAN2N3500L-Transistor High-Voltage NPN Power Transistor TO-3 Package by ON Semiconductor

JAN2N3500L-Transistor Overview

The JAN2N3500L is a high-voltage bipolar junction transistor (BJT) designed for robust switching and amplification in demanding industrial and military applications. Featuring a high collector-emitter voltage rating of 350V and a collector current capacity of up to 2A, this transistor supports reliable operation in power control circuits, audio amplifiers, and signal processing systems. Its JAN (Joint Army-Navy) military-grade certification ensures rigorous quality and performance standards, making it suitable for environments requiring enhanced durability and stability. Engineers and sourcing specialists can rely on this device for precision, long-term reliability, and consistent operation across a wide temperature range. For more details, visit IC Manufacturer.

JAN2N3500L-Transistor Technical Specifications

JAN2N3500L-Transistor Key Features

• High voltage handling capability: Supports collector-emitter voltages up to 350V, enabling use in high-voltage switching and amplification circuits with assured reliability.
• Robust current rating: Delivers continuous collector current up to 2A, ensuring compatibility with medium-power load requirements.
• Military-grade construction: Designed under JAN standards, guaranteeing enhanced temperature tolerance (-65??C to +200??C) and mechanical ruggedness for harsh environments.
• Moderate gain and frequency response: Offers a DC current gain ranging from 20 to 70 and a transition frequency of 10 MHz, balancing amplification precision and switching speed in industrial applications.

Typical Applications

• Power switching and control circuits requiring high-voltage transistors with stable performance over wide temperature ranges.
• Audio amplifier stages where moderate gain and reliable current handling are necessary for clean signal amplification.
• Signal processing modules in military and aerospace systems demanding stringent quality and environmental resilience.
• Industrial automation systems utilizing robust discrete transistors for switching loads and interfacing with control logic.

JAN2N3500L-Transistor Advantages vs Typical Alternatives

This transistor??s JAN military-grade certification ensures superior reliability and stability compared to commercial-grade alternatives. Its high voltage rating up to 350V and robust current capacity make it well-suited for demanding industrial and defense applications where power and sensitivity are critical. The rugged TO-18 package further enhances thermal management and mechanical durability, providing an edge in harsh operating environments over typical plastic-encapsulated transistors.

JAN2N3500L-Transistor Brand Info

The JAN2N3500L transistor is manufactured under the Joint Army-Navy (JAN) standard, indicating compliance with strict military specifications for quality and performance. Historically produced by reputable semiconductor manufacturers specializing in defense-grade components, this part reflects a proven design lineage focused on durability and consistency. It is commonly sourced from manufacturers who supply high-reliability discrete semiconductors for aerospace, military, and industrial sectors, ensuring traceability and stringent testing protocols.

FAQ

What does the JAN designation mean for this transistor?