JAN2N3499UB/TR Overview
The JAN2N3499UB/TR is a high-voltage NPN bipolar junction transistor designed for demanding industrial and military applications requiring robust switching and amplification performance. Featuring a collector-emitter voltage rating of 300 V and a continuous collector current of 3 A, it delivers reliable operation under elevated power conditions. Its hermetically sealed TO-66 metal can package ensures enhanced thermal conductivity and long-term durability in harsh environments. Ideal for designers and sourcing specialists targeting high-reliability semiconductor components, this transistor offers stable gain and fast switching characteristics. For more details and authorized procurement, visit IC Manufacturer.
JAN2N3499UB/TR Key Features
- High voltage capacity: Supports up to 300 V collector-emitter voltage, enabling operation in high-voltage switching circuits.
- Robust collector current: Handles 3 A continuous current, ensuring reliable power amplification and switching under load.
- Hermetically sealed TO-66 package: Provides superior thermal performance and environmental protection for extended device life.
- Consistent gain characteristics: Offers stable DC current gain (hFE) across operating conditions, critical for precision control and amplification.
JAN2N3499UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 300 | V |
| Collector-Base Voltage (VCBO) | 400 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Continuous Collector Current (IC) | 3 | A |
| Peak Collector Current (ICM) | 5 | A |
| DC Current Gain (hFE) | 20?C70 | ?? |
| Power Dissipation (PD) | 30 | W |
| Transition Frequency (fT) | ?? | MHz (typical not specified) |
| Package Type | TO-66 Metal Can | ?? |
JAN2N3499UB/TR Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling compared to standard low-power BJTs, making it well-suited for high-voltage industrial circuits. Its hermetically sealed TO-66 package enhances reliability by protecting against moisture and contaminants, which typical plastic packages may not withstand. The device??s stable gain and power dissipation ratings ensure consistent performance in demanding applications, setting it apart from generic transistors with lower robustness and less predictable behavior.
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Typical Applications
- Power switching in industrial motor controls, where high voltage and current capabilities ensure reliable operation in harsh environments.
- Amplification stages in high-voltage analog signal processing circuits requiring consistent gain and low distortion.
- Military and aerospace electronics demanding rugged semiconductor devices with proven environmental resistance.
- High-reliability industrial power supplies and converters that benefit from the device??s robust thermal and electrical specifications.
JAN2N3499UB/TR Brand Info
The JAN2N3499UB/TR is a product from a trusted semiconductor manufacturer specializing in high-reliability discrete components. Designed to meet stringent military standards, this transistor embodies the brand??s commitment to durability, precision, and performance. Its heritage in the JAN (Joint Army-Navy) series signifies compliance with rigorous testing protocols, making it a preferred choice for engineers and sourcing professionals requiring dependable components for critical applications.
FAQ
What is the maximum operating voltage for this transistor?
The maximum collector-emitter voltage rating is 300 V, allowing it to operate safely in circuits with high voltage demands without risk of breakdown.
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What package type does this transistor use and why is it important?
This transistor uses a hermetically sealed TO-66 metal can package, which provides excellent thermal conductivity and protects the device from moisture and contaminants, critical for long-term reliability in challenging environments.
Can this transistor handle high current loads continuously?
Yes, it supports a continuous collector current of 3 A, making it suitable for applications that require sustained power handling without performance degradation.
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Is this device suitable for military or aerospace applications?
Yes, the JAN prefix indicates qualification to military standards, ensuring the transistor meets stringent reliability and environmental requirements for aerospace and defense projects.
How does the DC current gain (hFE) impact application performance?
The DC current gain range of 20 to 70 provides consistent amplification characteristics, which is essential for precision control in analog circuits and helps maintain predictable switching behavior.
