JAN2N3498U4-Transistor Overview
The JAN2N3498U4 is a high-power NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. Engineered to handle elevated collector currents and voltages, this transistor provides reliable performance in demanding industrial and military environments. Its rugged construction ensures enhanced thermal stability and durability, making it suitable for power control circuits and high-frequency amplification. The device is available in a TO-3 metal can package, which facilitates efficient heat dissipation and long-term reliability. For detailed procurement and technical assistance, visit IC Manufacturer.
JAN2N3498U4-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 300 V (typical maximum) |
| Collector Current (IC) | 10 A continuous |
| Power Dissipation (PD) | 115 W (at 25??C) |
| DC Current Gain (hFE) | 20 to 70 |
| Transition Frequency (fT) | 5 MHz (typical) |
| Package Type | TO-3 Metal Can |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
| Collector-Base Voltage (VCBO) | 300 V |
JAN2N3498U4-Transistor Key Features
- High voltage and current rating: Supports collector voltages up to 300 V and continuous current up to 10 A, enabling use in power amplifier and switching applications.
- Robust TO-3 package: Metal can construction facilitates superior heat dissipation, enhancing reliability and thermal stability under high power.
- Wide operating temperature range: Rated for junction temperatures from -65??C to +200??C, suitable for harsh industrial and military environments.
- Moderate gain and frequency response: Ensures stable amplification with a DC gain between 20 and 70 and transition frequency around 5 MHz, ideal for medium-frequency power stages.
Typical Applications
- Power amplifier stages in industrial RF and audio equipment, where high current and voltage handling are critical for performance and durability.
- Switching regulators and power control circuits requiring rugged transistors capable of sustained high power dissipation and thermal stress.
- Motor control and driving circuits in industrial automation, benefiting from the device??s high current capacity and robust packaging.
- Military and aerospace electronics, where reliable operation over extended temperature ranges and harsh conditions is essential.
JAN2N3498U4-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and wide operating temperature range compared to common small-signal or lower-rated BJTs. Its rugged TO-3 package enhances thermal management and long-term reliability, making it preferable for high-power industrial and military applications. With a balanced combination of gain and frequency response, it provides reliable performance where typical alternatives may fail due to thermal or electrical stress.
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JAN2N3498U4-Transistor Brand Info
The JAN2N3498U4 transistor originated as a military-grade device manufactured to stringent quality and reliability standards. Although the original production was by established semiconductor manufacturers specializing in defense and industrial components, this part is now supplied by various authorized distributors and legacy component suppliers. Its design aligns with JEDEC standards for high-power BJTs, ensuring compatibility and dependable performance in critical applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current rating of this transistor is 10 amperes. This allows it to handle substantial current loads typical in power amplification and switching applications.
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Which package type does the transistor use and why is it important?
This device is housed in a TO-3 metal can package. This packaging provides excellent thermal conductivity, which helps dissipate heat effectively, ensuring reliable operation under high power and temperature conditions.
Can this transistor be used in high-frequency applications?
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