JAN2N3498L-Transistor NPN Power Transistor in TO-3P Package ?C High Performance Amplifier

  • Designed to amplify or switch electronic signals, enhancing circuit control and performance.
  • Features a key electrical specification that ensures stable operation under varying conditions.
  • Its compact package reduces board space, facilitating efficient layout in dense assemblies.
  • Suitable for signal processing tasks in consumer or industrial electronics, improving system responsiveness.
  • Manufactured to meet standard reliability criteria, ensuring consistent performance over time.
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JAN2N3498L-Transistor Overview

The JAN2N3498L is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Featuring a high collector-emitter voltage rating and significant collector current capacity, this transistor ensures reliable operation in demanding industrial environments. Its complementary package and electrical characteristics make it suitable for power management and control circuits. Engineered for durability and efficiency, the device supports high gain and fast switching speeds, optimizing overall system performance. Sourcing specialists and design engineers will find this transistor an ideal option for enhancing circuit reliability and efficiency in power electronics. For detailed technical support and sourcing, visit IC Manufacturer.

JAN2N3498L-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)300V
Collector-Base Voltage (VCBO)400V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)10A
Power Dissipation (Ptot)115W
DC Current Gain (hFE)40 – 160(at IC=4A)
Transition Frequency (fT)5MHz
Junction Temperature (Tj)+200??C

JAN2N3498L-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltage up to 300 V, enabling use in high-voltage power switching circuits.
  • High collector current capacity: Rated for continuous collector current up to 10 A, suitable for power amplification and load driving.
  • Wide DC current gain range: Provides gains between 40 and 160, allowing for flexible biasing and amplification control in various circuit designs.
  • Robust power dissipation: Capable of dissipating up to 115 W, improving thermal reliability under heavy load conditions.

Typical Applications

  • Power amplifiers in audio and industrial equipment requiring high voltage and current handling capabilities for efficient signal processing.
  • Switching regulators and power supply circuits where high power dissipation and voltage ratings are essential for stability and performance.
  • Motor control and driver circuits that benefit from the device??s fast switching and high current handling capacity.
  • General-purpose amplification in industrial control systems, leveraging its broad gain range and rugged electrical characteristics.

JAN2N3498L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many general-purpose transistors, ensuring reliable performance in high power applications. Its robust power dissipation capability enhances thermal management, reducing device failure risks. The wide DC gain range provides design flexibility, and the junction temperature rating up to 200??C supports operation in harsh environments. These advantages make it a preferred choice for engineers requiring high reliability and efficiency in demanding industrial and power electronics systems.

JAN2N3498L-Transistor Brand Info

The JAN2N3498L is a military-grade transistor originally produced under the Joint Army-Navy (JAN) specification, indicating strict quality and reliability standards for use in defense and aerospace applications. Manufactured by reputable semiconductor producers complying with JAN standards, this transistor meets rigorous screening and testing requirements to ensure superior durability and performance. The JAN prefix signifies enhanced environmental and electrical robustness, making it suitable for critical industrial and military electronics where failure is not an option.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

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