JAN2N3498-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This transistor enables efficient switching and amplification, improving circuit performance and control.
  • Its specified voltage rating ensures safe operation under various electrical conditions, preventing device failure.
  • The compact package type reduces board space, facilitating integration in dense electronic assemblies.
  • Ideal for use in power regulation circuits, it supports stable energy management in consumer or industrial devices.
  • Manufactured to meet standard quality protocols, it provides consistent performance and long-term reliability.
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JAN2N3498-Transistor Overview

The JAN2N3498 transistor is a high-voltage, NPN bipolar junction transistor designed for demanding power amplification and switching applications. Engineered for robust performance, it offers a maximum collector-emitter voltage of 300 V and a collector current rating suitable for medium to high power stages. This device ensures reliable operation in industrial and military-grade environments, meeting stringent quality and durability standards. With a complementary combination of gain and breakdown voltage, the transistor supports efficient signal amplification and switching in diverse circuits. For verified supply and detailed datasheets, visit IC Manufacturer.

JAN2N3498-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 300 V
Collector-Base Voltage (VCBO) 400 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 40 to 160 (typical)
Transition Frequency (fT) 3 MHz
Package Type TO-3

JAN2N3498-Transistor Key Features

  • High voltage capability: Enables operation in circuits requiring up to 300 V collector-emitter voltage, supporting robust power switching and amplification tasks.
  • Substantial collector current rating: Handles up to 10 A continuous current, making it suitable for medium power applications where reliable current handling is critical.
  • Wide DC current gain range: Provides flexibility in circuit design with gains from 40 to 160, facilitating stable amplification across various load conditions.
  • Reliable TO-3 metal can package: Ensures efficient heat dissipation and mechanical durability, enhancing device longevity under thermal stress.

Typical Applications

  • Power amplifier stages in audio and RF systems, where high voltage and current handling are essential for delivering clear, distortion-free output.
  • Switching regulators and power supplies requiring robust transistors to handle high voltage transients and maintain efficiency.
  • Industrial motor control circuits, benefiting from the transistor??s ability to manage sizable currents and voltages reliably.
  • Military and aerospace applications where compliance with JAN (Joint Army-Navy) standards ensures dependable performance under harsh environmental conditions.

JAN2N3498-Transistor Advantages vs Typical Alternatives

This transistor offers a distinctive combination of high voltage tolerance and substantial current capacity, outperforming many general-purpose transistors in demanding power applications. The TO-3 package delivers superior thermal management compared to plastic encapsulated devices, enhancing reliability and lifespan. Its broad current gain range allows for adaptable circuit designs with improved accuracy and control. These advantages make it a preferred choice where sensitivity, robustness, and stable operation under elevated stress are required.

JAN2N3498-Transistor Brand Info

The JAN2N3498 transistor is a military-grade component originally developed under the JAN (Joint Army-Navy) standard, ensuring compliance with rigorous quality and reliability criteria. Typically manufactured by established semiconductor suppliers specializing in defense and industrial electronics, the device is known for its rugged construction and consistent performance. The JAN prefix denotes qualification for use in high-reliability and high-temperature environments, making it a trusted solution for critical applications requiring durable and dependable power transistors.

FAQ

What are the key electrical ratings of this transistor?

The transistor supports a maximum collector-emitter voltage of 300 V, collector-base voltage of 400 V, and a continuous collector current of 10 A. It dissipates up to 115 W of power, making it suitable for high-voltage and medium-power applications.

What package does this transistor come in and why is it important?

It is housed in a TO-3 metal can package, which provides excellent

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