JAN2N3485A-Transistor Overview
The JAN2N3485A is a high-performance N-channel enhancement mode MOSFET designed for robust switching and amplification applications in industrial and military-grade electronics. This transistor offers excellent voltage handling with a drain-source voltage rating suitable for demanding environments. Engineered for reliability and efficiency, it supports continuous drain current with low on-resistance, enhancing power efficiency and thermal management in complex circuits. The device??s rugged construction and precise electrical characteristics make it ideal for critical applications requiring stable operation. For detailed sourcing and technical support, visit IC Manufacturer.
JAN2N3485A-Transistor Key Features
- High Drain-Source Voltage (VDS): Supports up to 100 V, enabling use in high-voltage switching and control circuits.
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving power efficiency in switching applications.
- Continuous Drain Current Capacity: Handles up to 8 A, ensuring reliable performance under sustained load conditions.
- Fast Switching Speed: Optimizes device response time, crucial for pulse-width modulation and switching power supplies.
JAN2N3485A-Transistor Technical Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ??20 | V |
| Continuous Drain Current (TC=25??C) | ID | 8 | A |
| Pulsed Drain Current | IDM | 32 | A |
| On-Resistance (Max) | RDS(on) | 0.55 | ?? |
| Power Dissipation | PD | 50 | W |
| Operating Temperature Range | TJ | -65 to +200 | ??C |
| Gate Threshold Voltage | VGS(th) | 2.0?C4.0 | V |
JAN2N3485A-Transistor Advantages vs Typical Alternatives
This transistor provides a superior balance of voltage tolerance and current handling compared to standard MOSFETs, making it advantageous for high-reliability and rugged industrial applications. Its low on-resistance reduces power losses and heat generation, enhancing overall system efficiency. The wide operating temperature range and military-grade JAN (Joint Army-Navy) qualification ensure dependable performance in harsh environments, setting it apart from typical commercial-grade devices.
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Typical Applications
- Power switching and regulation circuits requiring high voltage and current handling, such as motor control in industrial automation systems.
- High-frequency switching in power supplies and DC-DC converters for efficient energy management.
- Military and aerospace electronic systems demanding rugged, reliable MOSFETs capable of withstanding extreme conditions.
- General purpose amplification in analog circuits where fast switching and low conduction losses are critical.
JAN2N3485A-Transistor Brand Info
The JAN2N3485A transistor is a military-grade MOSFET recognized for its rigorous quality and reliability standards under the Joint Army-Navy (JAN) specification. It is produced to meet stringent environmental and electrical performance criteria, ensuring consistent operation in critical defense and aerospace applications. This device is widely trusted for its proven durability, backed by comprehensive testing and certification protocols, making it a preferred choice for engineers and sourcing specialists focused on mission-critical designs.
FAQ
What is the maximum drain-source voltage rating of this transistor?
The maximum drain-source voltage (VDS) rating is 100 volts, allowing the transistor to safely operate in circuits with relatively high voltage demands without risk of breakdown.
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Can the JAN2N3485A handle continuous high current loads?
Yes, it supports a continuous drain current of up to 8 amps at a case temperature of 25??C. This makes it suitable for applications requiring sustained current flow without degradation.
What makes this transistor suitable for military or aerospace applications?
The JAN2N3485A complies with JAN specifications, which include rigorous testing for temperature extremes, mechanical shock, and electrical performance. Its robust construction and reliability under harsh conditions make it ideal for defense and aerospace use.
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How does the on-resistance impact performance?
Lower on-resistance reduces conduction losses during operation, improving efficiency and minimizing heat generation. The maximum RDS(on) of 0.55 ?? helps maintain optimal power conversion in switching applications.
What is the typical gate threshold voltage range for this device?
The gate threshold voltage (VGS(th)) typically falls between 2.0 and 4.0 volts, defining the voltage required to begin turning the MOSFET on. This range aids in designing gate drive circuits with appropriate voltage levels.
