JAN2N3439UA-Transistor NPN RF Amplifier Transistor in TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its maximum voltage rating ensures safe operation under typical electrical loads, preventing damage.
  • The compact package type reduces board space, allowing for denser circuit designs and easier integration.
  • Ideal for use in signal amplification within communication devices, improving signal clarity and response.
  • Manufactured to meet industry standards, it offers consistent performance and long-term reliability.
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JAN2N3439UA-Transistor Overview

The JAN2N3439UA transistor is a high-performance NPN bipolar junction transistor designed for power amplification and switching applications. Engineered for robust operation under demanding conditions, it features a high collector current and voltage rating, making it suitable for industrial and military-grade electronic systems. This transistor ensures reliable performance with a durable TO-3 package, offering excellent thermal dissipation. Its characteristics support efficient power handling and low saturation voltage, which optimize device operation in power control circuits. For detailed technical support and procurement, visit the IC Manufacturer website.

JAN2N3439UA-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 15 – 70 ??
Transition Frequency (fT) 5 MHz
Operating Junction Temperature (TJ) +200 ??C

JAN2N3439UA-Transistor Key Features

  • High voltage and current handling: Supports collector-emitter voltages up to 100V and collector currents up to 10A, enabling use in high-power switching and amplification tasks.
  • Robust thermal performance: The TO-3 metal package provides superior heat dissipation, enhancing reliability in demanding industrial environments.
  • Wide gain range: DC current gain between 15 and 70 allows flexibility in circuit design for precise amplification control.
  • High power dissipation capability: Rated at 115W, it supports sustained operation under high load without degradation.

Typical Applications

  • Power amplification in audio frequency stages, where high collector current and voltage are essential for delivering clean, amplified signals.
  • Switching regulators and power supplies requiring reliable transistor switching with minimal losses.
  • Motor control circuits that demand robust switching and thermal stability for continuous operation.
  • Industrial automation systems where durable and high-power transistors are needed to drive loads efficiently.

JAN2N3439UA-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and thermal dissipation compared to many standard alternatives, thanks to its TO-3 package and high current ratings. Its broad voltage tolerance and reliable gain range provide engineers with flexibility and improved circuit stability. These features translate to enhanced durability and efficiency in power amplification and switching applications, making it a preferred choice for industrial and military-grade electronics.

JAN2N3439UA-Transistor Brand Info

The JAN2N3439UA is a military-grade transistor originally manufactured by reputable semiconductor producers specializing in high-reliability components. The “JAN” prefix indicates compliance with Joint Army-Navy standards, ensuring rigorous quality and performance benchmarks. This transistor is typically sourced from manufacturers known for producing robust discrete semiconductors designed for defense and industrial sectors, where long-term reliability under harsh conditions is critical.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum continuous collector current of 10 amperes, allowing it to handle substantial power loads in switching and amplification circuits.

Which package type does this transistor use and why is it important?

It is housed in a TO-3 metal

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