The JAN2N3439L is a high-performance NPN bipolar junction transistor designed for rugged industrial and military applications. Known for its reliable switching capabilities and robust electrical characteristics, this transistor offers a collector current rating of up to 10A and a collector-emitter voltage of 100V, making it suitable for power amplification and switching tasks in demanding environments. Its JAN (Joint Army-Navy) designation ensures compliance with stringent military standards, guaranteeing durability and performance under harsh conditions. Available in a TO-3 metal can package, this transistor is well-suited for high-reliability applications requiring efficient thermal management and long service life. For detailed sourcing and technical support, visit IC Manufacturer.
JAN2N3439L-Transistor Technical Specifications
Parameter
Specification
Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
100 V
Collector-Base Voltage (VCBO)
140 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
10 A
DC Current Gain (hFE)
10 to 50 (at IC=4A)
Power Dissipation (Ptot)
115 W
Transition Frequency (fT)
3 MHz (typical)
Package
TO-3 Metal Can
JAN2N3439L-Transistor Key Features
High collector current capability: Supports up to 10A, enabling robust power handling for industrial switching and amplification circuits.
Wide voltage ratings: With a collector-emitter voltage of 100V, suitable for medium to high voltage applications.
Military-grade reliability: JAN specification ensures operation under extreme environmental conditions and temperature ranges.
Efficient thermal management: TO-3 metal can package provides excellent heat dissipation, improving longevity and performance under continuous load.
Moderate gain with high power dissipation: Allows stable operation in demanding power amplifier designs.
Typical Applications
Power amplification stages in analog and RF circuits where high current and voltage handling are critical, such as audio amplifiers and transmitter output stages.
Industrial motor control circuits requiring rugged switching components for reliable operation under heavy load.
Military and aerospace power regulation systems benefiting from the transistor’s JAN qualification and robust packaging.
High-power switching applications in power supplies and inverters where thermal performance and durability are essential.
JAN2N3439L-Transistor Advantages vs Typical Alternatives
This transistor??s military-grade JAN certification ensures higher reliability and durability compared to commercial counterparts, especially in harsh environments. Its high collector current and voltage ratings combined with efficient thermal dissipation in a TO-3 package deliver superior performance for power-intensive applications. These characteristics make it a preferred choice over standard transistors lacking similar ruggedness and thermal management, providing engineers with confidence in long-term stability and operational safety.
The JAN2N3439L transistor is produced under the JAN (Joint Army-Navy) specification, which is a military standard applied by several legacy semiconductor manufacturers. This device is often associated with reputable manufacturers specializing in high-reliability semiconductors for defense and industrial markets. It is known for strict quality control, ensuring compliance with severe environmental and electrical performance standards. The TO-3 metal can package is a hallmark of these high-power transistors, offering proven ruggedness and thermal efficiency. This product line continues to be supported by specialized suppliers and distributors catering to military and industrial sectors.
