JAN2N3421S-Transistor NPN Power Transistor in TO-3 Package by Motorola

  • This transistor amplifies electrical signals, enabling efficient control of currents in various circuits.
  • Featuring a robust voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package design offers board-space savings, ideal for dense electronic assemblies.
  • Suitable for switching applications, it enhances performance in power regulation and signal modulation tasks.
  • Manufactured to meet strict quality standards, it provides reliable performance over extended use.
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JAN2N3421S-Transistor Overview

The JAN2N3421S is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring robust switching and amplification capabilities. Featuring a collector-emitter voltage rating of 100 V and a collector current of up to 0.8 A, this transistor ensures reliable operation under demanding conditions. Its complementary gain and low saturation voltage make it suitable for power amplification and switching circuits where precision and durability are essential. Manufactured to meet stringent military standards, the device is ideal for applications requiring dependable performance and long-term stability. For detailed product sourcing and specifications, visit IC Manufacturer.

JAN2N3421S-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (Ptot) 1 W
Transition Frequency (fT) 40 MHz
DC Current Gain (hFE) 40 to 160
Operating Temperature Range -65 to +200 ??C

JAN2N3421S-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 100 V, enabling use in high-voltage switching and amplification circuits.
  • Moderate current capability: Handles collector currents up to 0.8 A, suitable for medium power applications requiring reliable transistor switching.
  • Wide operating temperature range: With a thermal range from -65??C to +200??C, it ensures stable performance in harsh and variable environments.
  • Military-grade reliability: Manufactured to meet JAN (Joint Army-Navy) standards, providing enhanced durability and quality assurance for mission-critical systems.

Typical Applications

  • Switching and amplification in military communication systems, where reliability under extreme conditions is critical.
  • Power control circuits in industrial automation equipment requiring stable high-voltage transistor operation.
  • Audio frequency amplification in ruggedized electronic devices that demand consistent gain and low distortion.
  • General-purpose medium power transistor functions in aerospace and defense electronic assemblies.

JAN2N3421S-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and temperature ratings compared to many standard commercial devices, making it highly suitable for demanding industrial and military environments. Its broad gain range and power dissipation capacity provide design flexibility and reliable performance. The adherence to JAN standards ensures enhanced quality and reliability, which is critical in applications where failure is not an option. These factors combine to provide a robust solution that excels in sensitivity, durability, and power handling.

JAN2N3421S-Transistor Brand Info

The JAN2N3421S transistor is produced under the JAN (Joint Army-Navy) certification, a designation indicating compliance with strict military quality and reliability standards. This device is typically manufactured by leading semiconductor producers specializing in defense-grade components. The JAN series transistors are known for their rugged construction, rigorous screening, and consistent electrical characteristics, making them a preferred choice in aerospace, military, and industrial sectors. The JAN2N3421S continues this tradition by delivering dependable performance under extreme operating conditions.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this device is 0.8 amperes. This rating ensures safe operation within medium power applications, balancing current handling with thermal management requirements.

Can this transistor operate at high temperatures?

Yes, it is designed to operate reliably over a wide temperature range from -65??C up to +200??C, making it suitable for harsh environments and applications requiring thermal stability.

What voltage levels can this transistor

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