JAN2N3419S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by JAN

JAN2N3419S-Transistor Overview

The JAN2N3419S transistor is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications. Featuring a robust maximum collector-emitter voltage of 100V and a continuous collector current of up to 800mA, this device excels in switching and amplification tasks within demanding environments. Its JAN (Joint Army-Navy) qualification ensures stringent reliability and quality standards, making it suitable for aerospace, defense, and other mission-critical uses. Engineers and sourcing specialists benefit from its proven durability and consistent electrical characteristics, supporting reliable circuit design and long-term operational stability. For detailed technical data and sourcing, visit IC Manufacturer.

JAN2N3419S-Transistor Technical Specifications

JAN2N3419S-Transistor Key Features

• High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling use in circuits requiring high-voltage switching and amplification.
• Robust collector current capacity: Handles continuous collector currents up to 800mA, allowing for moderate power applications without compromising reliability.
• Wide DC current gain range: Offers gain from 40 to 160, facilitating flexible design in amplification stages with predictable performance.
• Military-grade JAN qualification: Ensures enhanced reliability and environmental resistance, critical for aerospace and defense systems.
• Metal TO-18 package: Provides excellent thermal conductivity and mechanical stability, improving device longevity under thermal stress.

Typical Applications

• Switching and amplification in military and aerospace electronic systems, where high reliability and precise gain are critical for mission success.
• Signal processing circuits requiring stable high-frequency performance up to 100 MHz.
• Power regulation and driver stages in industrial control equipment operating at moderate currents and voltages.
• General-purpose discrete transistor applications demanding ruggedness and dependable operation under harsh environmental conditions.

JAN2N3419S-Transistor Advantages vs Typical Alternatives

This transistor provides superior voltage and current handling compared to standard commercial transistors, thanks to its 100V rating and 800mA collector current capacity. Its JAN military-grade certification guarantees enhanced reliability and extended lifecycle, which are vital for critical applications. The metal TO-18 package improves thermal dissipation over plastic equivalents, reducing failure risk in demanding environments. These combined factors make it a preferred choice for engineers prioritizing long-term stability, robust performance, and precise gain control in high-reliability systems.

JAN2N3419S-Transistor Brand Info

The JAN2N3419S transistor is produced following the military Joint Army-Navy (JAN) quality standards, originally standardized under the U.S. Department of Defense. It is manufactured by multiple trusted semiconductor suppliers specializing in high-reliability discrete devices. These manufacturers ensure strict process controls, rigorous testing, and traceability, aligning with MIL-PRF-19500 specifications. This product is recognized for its consistent electrical parameters and durability, making it a staple in defense, aerospace, and industrial electronics markets worldwide.

FAQ

What does the JAN prefix signify in this transistor’s part number?

The JAN prefix indicates that