JAN2N3419-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package ?C Motorola

JAN2N3419-Transistor Overview

The JAN2N3419 is a high-voltage NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and military electronics. Known for its robust construction and reliable performance, this transistor supports collector-emitter voltages up to 100 V and collector currents up to 0.8 A, making it suitable for medium-power applications. With a complementary low noise figure and high gain characteristics, it ensures efficient signal handling and power management. Ideal for use in rugged environments, the device meets stringent quality standards typically required in defense and aerospace sectors. For detailed technical data and sourcing, visit the IC Manufacturer.

JAN2N3419-Transistor Technical Specifications

JAN2N3419-Transistor Key Features

• High Voltage Tolerance: Supports up to 100 V collector-emitter voltage allowing operation in medium to high-voltage circuits.
• Moderate Current Capacity: Handles collector currents up to 0.8 A, enabling effective switching and amplification in power control applications.
• Wide DC Gain Range: Provides current gain (hFE) from 40 to 300, ensuring flexibility in design for different gain requirements.
• Low Noise Performance: Suitable for amplifier stages where signal integrity and low noise are critical.
• Reliable Metal TO-18 Package: Offers enhanced thermal conductivity and mechanical durability, enhancing long-term reliability in harsh environments.

Typical Applications

• Switching circuits in industrial control systems where robust voltage and current handling are required for reliable operation.
• Low to medium power audio amplifiers benefiting from the transistor??s low noise and high gain characteristics.
• Signal amplification in communication equipment, leveraging its frequency response and gain stability.
• Military and aerospace electronic assemblies requiring rugged components that meet strict quality and reliability standards.

JAN2N3419-Transistor Advantages vs Typical Alternatives

The JAN2N3419 offers superior voltage handling and a broad current gain range compared to many standard NPN transistors. Its metal TO-18 package ensures better thermal dissipation and mechanical durability, enhancing reliability in demanding industrial and military applications. This combination of electrical robustness and quality packaging provides engineers with a dependable alternative to plastic-encapsulated transistors, especially where long-term stability and noise performance are critical.

JAN2N3419-Transistor Brand Info

The JAN2N3419 transistor is a military-grade semiconductor device originally standardized under the Joint Army-Navy (JAN) designation system. It is manufactured by multiple reputable suppliers specializing in high-reliability components for defense and aerospace markets. This transistor typically conforms to MIL-STD-750 testing procedures, ensuring its ruggedness and suitability for harsh environments. It is widely recognized for its consistent performance and durability, making it a trusted choice in critical industrial and military electronic designs.

FAQ

What is the maximum voltage the JAN2N3419 transistor can handle?

This transistor supports a maximum collector-emitter voltage of 100 volts, allowing it to be used reliably in medium to high voltage circuits common in industrial and military applications.

What types of applications benefit most from this transistor?

The device is ideal for switching and amplification tasks in industrial control