JAN2N3418S-Transistor Overview
The JAN2N3418S transistor is a high-performance NPN bipolar junction transistor designed for use in switching and amplification applications. Recognized for its robust voltage and current handling capabilities, this device is suitable for medium power circuits requiring reliable operation under demanding conditions. With a collector-emitter voltage rating of 100V and a collector current capability of up to 0.8A, it supports diverse industrial and military-grade applications. The device??s complementary gain and frequency response make it ideal for audio, signal processing, and general-purpose amplification tasks. Engineers and sourcing specialists will find this transistor a dependable choice for precision and durability. For more information, visit IC Manufacturer.
JAN2N3418S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.8 A (continuous) |
| Power Dissipation (PD) | 625 mW (at 25??C) |
| DC Current Gain (hFE) | 40 to 300 (depending on current) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JAN2N3418S-Transistor Key Features
- High Voltage Handling: Supports up to 100V collector-emitter voltage, enabling use in moderately high voltage circuits.
- Moderate Current Capability: Handles continuous collector current up to 0.8A, suitable for medium power amplification and switching.
- Wide Gain Range: DC current gain between 40 and 300 provides flexibility across different operating conditions and circuit designs.
- Fast Switching Speed: Transition frequency up to 100 MHz allows effective operation in high-frequency signal processing applications.
- Robust Package: TO-18 metal can ensures excellent thermal dissipation and mechanical durability for industrial environments.
- Reliable Performance: Designed for stringent military and aerospace specifications, ensuring long-term reliability under stress.
Typical Applications
- Signal amplification in audio and instrumentation circuits, where stable gain and low noise are critical for precision output.
- Switching elements in power management circuits, enabling efficient control of medium current loads.
- Driver stages in relay and solenoid control systems, leveraging its voltage and current capacity for reliable operation.
- High-frequency oscillator and amplifier circuits, utilizing the transistor??s transition frequency for signal integrity.
JAN2N3418S-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage tolerance and current handling that outperforms many generic NPN transistors in similar packages. Its wide DC gain range improves circuit flexibility, while the TO-18 package enhances thermal management compared to plastic encapsulated devices. The device??s compliance with military specifications ensures superior reliability and longevity, making it a preferred choice in rigorous industrial and defense applications where precision and durability are essential.
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JAN2N3418S-Transistor Brand Info
The JAN2N3418S transistor is a military-grade variant of the 2N3418 transistor, originally standardized under Joint Army-Navy (JAN) specifications. These components are produced by established semiconductor manufacturers specializing in high-reliability devices for defense and aerospace sectors. The JAN prefix indicates compliance with stringent military quality standards, including enhanced testing and tighter parameter controls. This ensures the transistor meets demanding environmental and electrical performance requirements, making it suitable for critical applications requiring ruggedness and consistency.
FAQ
What is the maximum voltage rating of this transistor?
The maximum collector-emitter voltage rating is 100 volts, allowing the transistor to operate safely in circuits with moderately high voltage levels without risk of breakdown.
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