JAN2N336AT2-Transistor NPN Bipolar Junction Transistor in TO-18 Metal Can Package

JAN2N336AT2-Transistor Overview

The JAN2N336AT2 transistor is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military-grade electronics. Meeting stringent JAN (Joint Army-Navy) standards, this device ensures enhanced ruggedness, long-term stability, and consistent electrical characteristics. Its robust packaging and precise electrical parameters make it suitable for applications requiring dependable operation under harsh conditions. Engineers and sourcing specialists will find this transistor ideal for critical analog and digital circuits where performance and reliability are paramount. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N336AT2-Transistor Technical Specifications

JAN2N336AT2-Transistor Key Features

• High Current Gain: Provides excellent amplification with a DC current gain ranging from 100 to 300, enabling efficient signal boosting in low-power circuits.
• High Transition Frequency: Operates up to 100 MHz, supporting high-speed switching applications important for RF and communication devices.
• Robust Thermal Performance: Rated for junction temperatures up to 200??C, ensuring reliable operation in elevated temperature environments.
• Military-Grade Reliability: Built to JAN specifications, ensuring superior durability and consistency under rigorous conditions.

Typical Applications

• Signal amplification in analog circuits requiring stable gain and low noise for instrumentation and measurement systems.
• High-frequency switching in communication transmitters and receivers, benefiting from the transistor??s fast response.
• Power management in low-voltage control circuits where efficient current control is critical.
• Military and aerospace electronics demanding reliable components that meet strict environmental and performance standards.

JAN2N336AT2-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and electrical stability compared to standard commercial-grade BJTs, primarily due to its adherence to JAN military standards. Its high current gain and transition frequency allow efficient amplification and switching at frequencies that typical transistors may not reliably support. Additionally, the robust TO-18 metal can package enhances thermal dissipation and environmental resistance, ensuring long-term durability in demanding industrial and military applications.

JAN2N336AT2-Transistor Brand Info

The JAN2N336AT2 transistor is produced under the Joint Army-Navy (JAN) certification, indicating compliance with military performance and quality standards. This certification ensures the device meets strict criteria for ruggedness, reliability, and consistency. It is commonly manufactured by semiconductor suppliers specializing in military and aerospace-grade components, providing engineers with trusted parts for mission-critical designs. The metal can package and controlled manufacturing processes reflect the brand??s commitment to high-quality, durable transistors for demanding applications.

FAQ

What does the JAN certification mean for the 2N336A transistor?

JAN certification signifies that the transistor meets stringent military standards for quality, reliability, and performance. This includes resistance to environmental stresses like temperature extremes, vibration, and humidity, ensuring dependable operation in critical applications.

Is the transistor suitable for high-frequency switching applications?

Yes, with a transition frequency of 100 MHz, this transistor supports high-frequency switching and amplification, making it suitable