JAN2N335T2-Transistor NPN Power Transistor in TO-66 Metal Can Package by Motorola

  • This transistor controls current flow efficiently, enabling precise switching and amplification in circuits.
  • It features a robust voltage rating, ensuring stable operation under typical electrical loads.
  • The compact package reduces board space, facilitating design flexibility in tight electronic assemblies.
  • Ideal for power regulation in consumer electronics, it helps maintain consistent device performance.
  • Manufactured with quality standards that support long-term reliability and consistent electrical characteristics.
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JAN2N335T2-Transistor Overview

The JAN2N335T2 transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial electronics. Featuring a high collector-to-emitter voltage rating and optimized current handling capabilities, this device ensures reliable operation under demanding conditions. Its junction avalanche rating enhances protection against voltage spikes, making it suitable for rigorous environments. Engineers and sourcing specialists can rely on this transistor for efficient circuit design, power management, and signal amplification tasks. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N335T2-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) – Continuous 12 A
Power Dissipation (PD) 160 W
DC Current Gain (hFE) 20 – 70 ??
Transition Frequency (fT) ?? MHz
Operating Junction Temperature (TJ) -65 to +200 ??C
Junction Avalanche Energy (EAS) 100 mJ

JAN2N335T2-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60 V, enabling use in moderate power switching applications.
  • Robust current handling: Able to continuously conduct collector currents up to 12 A, suitable for high-load conditions.
  • Excellent power dissipation: Rated for 160 W, ensuring reliable thermal management in demanding circuits.
  • Wide operating temperature range: Functions effectively from -65??C to +200??C, allowing for use in harsh environments.
  • Junction avalanche capability: Provides protection against voltage spikes, enhancing device longevity and circuit reliability.
  • Moderate DC current gain: Offers hFE values between 20 and 70, balancing amplification and switching performance.
  • Industry-standard package: Facilitates easy integration into existing designs and simplifies assembly.

Typical Applications

  • Power amplifiers in industrial control systems where high collector current and voltage ratings are critical for performance and durability.
  • Switching regulators and power management circuits that require efficient handling of transient voltage conditions.
  • Motor control circuits benefiting from the transistor??s high current capacity and rugged avalanche energy rating.
  • General-purpose amplification in audio and signal processing equipment, taking advantage of the transistor??s gain characteristics and thermal stability.

JAN2N335T2-Transistor Advantages vs Typical Alternatives

This transistor offers a superior balance of voltage and current ratings with robust avalanche energy handling, outperforming many standard NPN transistors in reliability and durability. Its wide operating temperature range and high power dissipation rating provide greater design flexibility and long-term stability under industrial conditions. These advantages make it a preferred choice over typical alternatives where sensitivity to voltage spikes and thermal stresses is a concern.

JAN2N335T2-Transistor Brand Info

The JAN prefix indicates that this transistor conforms to military specifications for quality and reliability, commonly associated with manufacturers adhering to stringent MIL-STD-883 standards. Produced by established semiconductor vendors specializing

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