JAN2N335LT2-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by JAN

JAN2N335LT2-Transistor Overview

The JAN2N335LT2 is a high-performance NPN bipolar junction transistor designed for military and industrial applications requiring robust switching and amplification capabilities. With its reliable current gain and voltage ratings, this transistor delivers consistent operation under demanding conditions. It features a TO-18 metal can package, ensuring excellent thermal conductivity and enhanced durability. Ideal for use in signal processing, power control, and general-purpose amplification, the device complies with military specifications, guaranteeing superior quality and long-term reliability. Sourcing specialists and engineers benefit from its dependable performance and streamlined integration in complex electronic circuits. For detailed technical support and supply, visit IC Manufacturer.

JAN2N335LT2-Transistor Technical Specifications

JAN2N335LT2-Transistor Key Features

• High collector current capability: Supports peak current up to 10 A, enabling efficient handling of power in switching applications.
• Wide voltage ratings: Collector-emitter and collector-base voltages up to 60 V and 75 V respectively, allowing use in higher voltage circuits.
• Robust thermal performance: TO-18 metal can package ensures effective heat dissipation, enhancing reliability under thermal stress.
• Military-grade quality: Manufactured to MIL-STD standards, offering exceptional durability and performance consistency in harsh environments.

Typical Applications

• High-reliability switching circuits where sustained collector current and voltage ratings are critical for system integrity and performance.
• Amplification stages in analog signal processing requiring stable gain and low noise characteristics.
• Power regulation and control modules in industrial automation systems, ensuring dependable operation under continuous load.
• Military and aerospace electronics demanding rugged, thermally efficient transistor components for mission-critical tasks.

JAN2N335LT2-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity, voltage tolerance, and military-grade ruggedness that surpasses many standard transistors. Its metal can packaging enhances thermal management, translating into improved reliability and longer operational life in challenging environments. Compared to typical plastic-encapsulated devices, it provides better performance stability, making it an ideal choice for demanding industrial and defense applications where precision and durability are essential.

JAN2N335LT2-Transistor Brand Info

The JAN2N335LT2 is a military-spec transistor produced originally under stringent quality controls aligned with the JAN (Joint Army-Navy) standards. These transistors are commonly manufactured by established semiconductor providers specializing in high-reliability discrete components. The JAN designation signifies compliance with military certification requirements, ensuring parts meet or exceed strict performance and environmental criteria. This product is typically sourced through authorized distributors and is favored in applications requiring proven reliability and traceability in electronic assemblies.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a peak collector current of up to 10 amperes, which allows it to handle high power loads in switching and amplification applications without compromising device integrity.

How does the TO-18 package benefit thermal performance?

The TO-18 metal can package provides