JAN2N335AT2-Transistor Overview
The JAN2N335AT2 is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in medium to high power applications. It features a silicon NPN structure, optimized for reliable operation under demanding electrical conditions. Offering robust current handling and voltage ratings, this transistor supports efficient signal control with stable gain characteristics. Its rugged construction ensures durability, making it suitable for use in industrial electronics, power supplies, and amplifier circuits. Engineers and sourcing specialists will find this device an excellent choice for projects requiring a balance of power capability and dependable performance. For detailed specifications and sourcing options, visit IC Manufacturer.
JAN2N335AT2-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Silicon | – |
| Collector-Emitter Voltage (VCEO) | 70 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 15 | A |
| Power Dissipation (Ptot) | 115 | W |
| Transition Frequency (fT) | 4.5 | MHz |
| DC Current Gain (hFE) | 20 to 70 | – |
| Operating Junction Temperature (TJ) | 200 | ??C |
JAN2N335AT2-Transistor Key Features
- High Collector Current Capacity: Supports up to 15A, enabling effective handling of medium to high power loads without compromising reliability.
- Wide Voltage Ratings: Collector-emitter voltage up to 70V allows for use in circuits requiring robust voltage tolerance.
- Stable DC Gain: Current gain (hFE) ranging from 20 to 70 ensures consistent amplification performance across various operating conditions.
- Elevated Power Dissipation: Maximum power dissipation of 115W supports applications with significant thermal stress, enhancing operational durability.
- High Operating Temperature: Rated for junction temperatures up to 200??C, suitable for demanding thermal environments.
- Medium Frequency Performance: Transition frequency of 4.5 MHz balances switching speed and power handling for versatile industrial uses.
- Rugged Construction: Designed to meet military specifications ensuring long-term reliability and stable electrical characteristics under harsh conditions.
Typical Applications
- Power Amplification in Industrial Audio and RF Circuits: Utilizes the transistor’s high current and voltage ratings to deliver efficient and stable signal amplification in mid-frequency applications.
- Switching Regulators and Power Supply Control: Enables robust switching capability, facilitating efficient power management in DC-DC converters and power supplies.
- Motor Control Circuits: Supports high load currents and voltage swings, making it suitable for driving motors in industrial automation systems.
- General-Purpose Amplification and Switching: Ideal for use in analog and digital circuits requiring reliable medium power transistors with stable gain and thermal endurance.
JAN2N335AT2-Transistor Advantages vs Typical Alternatives
This transistor offers superior current handling and power dissipation compared to many general-purpose BJTs, delivering enhanced reliability and efficiency in demanding industrial environments. Its wide voltage margins and thermal tolerance provide better robustness versus typical alternatives. The stable gain and rugged construction allow precise control and long-term operation under stress, making it a preferred choice for engineers seeking dependable performance in power amplification and switching applications.
