JAN2N333LT2-Transistor NPN Power Transistor in TO-220 Package by ON Semiconductor

JAN2N333LT2-Transistor Overview

The JAN2N333LT2 transistor is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring reliable switching and amplification. Known for its robust construction and stringent quality standards, this transistor delivers consistent gain and excellent electrical characteristics across a wide temperature range. Its rugged design ensures dependable operation in harsh environments, making it suitable for aerospace, defense, and other demanding sectors. Engineers and sourcing specialists benefit from its proven reliability and compatibility with standard circuit designs. For more detailed technical information and sourcing options, visit IC Manufacturer.

JAN2N333LT2-Transistor Technical Specifications

JAN2N333LT2-Transistor Key Features

• High voltage rating: Allows operation in circuits up to 60 V collector-emitter voltage, ensuring versatility in power control applications.
• Wide current handling capability: Supports collector currents up to 800 mA, suitable for moderate power amplification and switching tasks.
• Wide gain range: DC current gain from 40 to 300 provides flexibility for precise amplification needs and signal conditioning.
• Robust TO-18 metal can package: Offers excellent thermal stability and mechanical durability for reliable long-term operation in harsh environments.

Typical Applications

• Signal amplification in analog circuits where moderate power gain and linear performance are required, such as audio preamplifiers or sensor interfaces.
• Switching applications in industrial control systems, enabling efficient on/off operation of loads or relays.
• Military and aerospace electronic systems requiring components with verified reliability and consistent performance under temperature extremes.
• General-purpose low noise amplification in RF and communication equipment, benefiting from high transition frequency and gain characteristics.

JAN2N333LT2-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and stable electrical performance compared to standard commercial devices, making it ideal for mission-critical applications. Its broad gain range and voltage ratings provide design flexibility, while the rugged TO-18 packaging ensures durability under thermal and mechanical stress. These advantages result in enhanced accuracy, sensitivity, and overall system robustness when contrasted with typical alternatives.

JAN2N333LT2-Transistor Brand Info

The JAN prefix designates a Joint Army-Navy specification, indicating this transistor meets rigorous military standards for performance and reliability. Manufactured by trusted semiconductor suppliers specializing in defense-grade components, this transistor is built to meet strict quality and screening requirements. The JAN2N333LT2 is widely recognized in the electronics industry for its consistent quality and dependable operation in demanding environments.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 800 milliamps (mA), allowing it to handle moderate power levels suitable for amplification and switching in industrial and military applications.

What package type does this transistor use, and why is it important?

This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection. This packaging supports reliable performance in harsh environments and helps dissipate heat efficiently.

Can this transistor operate at high frequencies?

Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor is suitable for moderate frequency amplification tasks, including RF and communication signal processing.

Is this transistor suitable for aerospace applications?

Absolutely