JAN2N333AT2-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by JAN

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package design reduces board space, simplifying integration into dense circuit layouts.
  • Ideal for switching applications, it enhances performance in power management and signal modulation tasks.
  • Manufactured to meet rigorous quality standards, it delivers consistent performance and long-term reliability.
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JAN2N333AT2-Transistor Overview

The JAN2N333AT2 is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications. Known for its reliability and robust electrical characteristics, this transistor supports moderate power handling and switching capabilities. It features a maximum collector current of 800mA and a collector-emitter voltage rating of 100V, making it suitable for amplification and switching tasks in demanding environments. The JAN2N333AT2??s military-level JAN (Joint Army-Navy) specification ensures stringent quality and consistency. Engineers and sourcing specialists can trust this device for precision applications requiring durability and stable operation. For detailed technical support and purchasing, visit IC Manufacturer.

JAN2N333AT2-Transistor Technical Specifications

ParameterSpecificationUnit
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)100Volts
Collector-Base Voltage (VCBO)100Volts
Emitter-Base Voltage (VEBO)5Volts
Collector Current (IC)800mA
Power Dissipation (Ptot)800mW
DC Current Gain (hFE)40 to 100
Transition Frequency (fT)100MHz
Operating Temperature Range-65 to +200??C

JAN2N333AT2-Transistor Key Features

  • High Voltage Tolerance: Supports up to 100V collector-emitter voltage, enabling use in high-voltage switching and amplification scenarios.
  • Robust Collector Current Handling: Allows continuous collector current of 800mA, suitable for medium power circuits without thermal concerns.
  • Wide Operating Temperature Range: Functional from -65??C to +200??C, ideal for harsh environments and aerospace applications.
  • Military-Grade Quality: Complies with JAN specifications ensuring superior reliability and consistency for defense and aerospace projects.
  • Efficient Frequency Response: Transition frequency up to 100MHz facilitates moderate speed switching and amplification in RF circuits.

Typical Applications

  • Switching circuits in military and aerospace systems where reliability under extreme conditions is critical.
  • Audio amplification stages requiring stable gain and low distortion over a wide temperature range.
  • Signal amplification in industrial control systems operating under variable environmental conditions.
  • General-purpose medium power transistor use in embedded systems and instrumentation equipment.

JAN2N333AT2-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high voltage capacity, moderate power handling, and military-grade reliability, which is often superior to standard commercial transistors. Its extended temperature range and JAN certification provide enhanced operational stability and durability in critical applications. Compared to typical alternatives, this device ensures consistent performance under stress, making it a preferred choice for industrial and aerospace engineers seeking dependable semiconductor components.

JAN2N333AT2-Transistor Brand Info

The JAN2N333AT2 is produced under rigorous Joint Army-Navy (JAN) standards, historically associated with manufacturers specializing in military and aerospace-grade semiconductors. These standards guarantee that the transistor meets strict quality assurance, reliability, and environmental testing criteria. The JAN designation signifies trusted compliance with defense industry requirements, making this transistor a recognized component in high-reliability sectors. The product is typically sourced from manufacturers with a legacy in producing semiconductors for harsh

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