The JAN2N333 transistor is a rugged, high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military-grade applications. Featuring a high voltage rating and substantial collector current capability, this transistor ensures reliable operation under demanding electrical conditions. Its JAN (Joint Army-Navy) designation indicates compliance with stringent military quality standards, making it suitable for critical environments requiring long-term durability and thermal stability. Engineers and sourcing specialists will find this component ideal for circuits requiring dependable linear amplification, switching, or signal modulation. For more detailed product information, visit the IC Manufacturer.
JAN2N333-Transistor Technical Specifications
Parameter
Value
Unit
Collector-Emitter Voltage (VCEO)
100
Volts
Collector-Base Voltage (VCBO)
120
Volts
Emitter-Base Voltage (VEBO)
5
Volts
Collector Current (IC)
1.5
Amperes
Power Dissipation (PD)
30
Watts
DC Current Gain (hFE)
40?C160
Dimensionless
Transition Frequency (fT)
30
MHz
Operating Junction Temperature (TJ)
-65 to +200
??C
JAN2N333-Transistor Key Features
High Voltage Capability: Supports up to 120V collector-base voltage, enabling use in high-voltage switching circuits without breakdown risk.
Robust Current Handling: Collector current rating of 1.5A allows efficient amplification and power switching in medium power applications.
Wide Operating Temperature Range: Functional from -65??C up to +200??C, ensuring reliability in harsh environmental and military conditions.
Enhanced Gain Performance: DC current gain between 40 and 160 facilitates flexible design options for linear amplification and switching tasks.
Military-Grade Quality: JAN certification guarantees high quality, durability, and traceability for mission-critical applications.
Typical Applications
Industrial power amplification circuits where high voltage and current capacity are required for driving loads or signal conditioning.
Switching circuits in aerospace and defense systems benefiting from reliable operation in extreme temperatures.
Signal modulation and amplification stages in communication equipment, leveraging stable gain and frequency response.
Control circuits in automotive or industrial machinery requiring durable components with military-grade specifications.
JAN2N333-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling capabilities compared to typical low-power BJTs, making it well-suited for demanding industrial and defense environments. Its military JAN certification ensures enhanced reliability and traceability, which many commercial alternatives lack. The wide operating temperature range and robust power dissipation improve system longevity and stability, reducing failure rates in harsh conditions and increasing overall design confidence.
The JAN2N333 transistor is produced under the JAN (Joint Army-Navy) military specification standard, which applies to components manufactured to meet stringent performance and reliability requirements for defense and aerospace applications. This part is commonly sourced from reputable semiconductor manufacturers specializing in high-reliability discrete devices. The JAN designation assures compliance with rigorous quality controls, including lot traceability, environmental stress testing, and enhanced electrical performance characterization. It is a trusted choice for engineers designing mission-critical systems where component failure is not an option.
FAQ
What does the JAN designation mean for the 2N333 transistor?
