JAN2N3057A-Transistor NPN Power Transistor TO-126 Package by ON Semiconductor

JAN2N3057A-Transistor Overview

The JAN2N3057A transistor is a high-power NPN bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military applications. It offers a collector-to-emitter voltage rating of 60V and a collector current capacity up to 15A, making it suitable for demanding load conditions. Its rugged construction ensures reliability under elevated temperature and high-stress environments. The device is ideal for engineers requiring a dependable transistor with strong gain characteristics and a complementary PNP transistor counterpart for push-pull amplifier circuits. Available through IC Manufacturer, this transistor supports critical applications in power control and audio amplification.

JAN2N3057A-Transistor Technical Specifications

JAN2N3057A-Transistor Key Features

• High collector current capacity: Supports up to 15A, enabling efficient handling of high-power loads without excessive heat generation.
• Robust voltage rating: Collector-emitter voltage of 60V ensures reliable operation in various industrial power switching applications.
• Wide operating temperature range: Rated for junction temperatures as low as -65??C and as high as +200??C, suitable for harsh environments.
• TO-3 package construction: Provides excellent thermal conductivity and mechanical durability for extended device life under demanding conditions.

Typical Applications

• Power amplification in audio frequency stages where robust current capability and linearity are required for clear signal reproduction.
• Industrial motor control circuits needing high current switching and thermal stability under fluctuating loads.
• Power regulators and converters where reliable transistor operation at elevated temperatures is critical.
• Military and aerospace electronic assemblies that demand rugged component performance in extreme environmental conditions.

JAN2N3057A-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current handling and voltage tolerance compared to typical small-signal transistors. Its metal TO-3 package enhances thermal dissipation, improving reliability and performance under heavy load and heat conditions. With a broad gain range and stable operation across a wide temperature spectrum, it outperforms many standard transistors in industrial and military-grade applications where durability and accuracy are paramount.

JAN2N3057A-Transistor Brand Info

The JAN2N3057A is a military-grade transistor originally manufactured under the Joint Army-Navy (JAN) specification, ensuring strict quality and reliability standards. This device is typically produced by reputable semiconductor manufacturers specializing in high-reliability components for defense and aerospace markets. The JAN prefix indicates adherence to MIL-STD-750 testing protocols, guaranteeing performance consistency in critical applications. Its legacy and proven track record make it a trusted choice for engineers requiring dependable power transistors with certified ruggedness.

FAQ

What are the maximum voltage and current ratings for this transistor?

The transistor can withstand a maximum collector-emitter voltage of 60 volts and can handle collector currents up to 15 amperes. These ratings make it suitable for high-power switching and amplification tasks.

What type of package does this transistor use and why is it important?

It uses a TO-3 metal can package, which offers excellent thermal conductivity and mechanical strength. This packaging helps dissipate heat efficiently, enhancing device reliability in high-power applications.

Can this transistor operate in extreme temperature conditions?

Yes, it is rated for operation between -65??C and +200??C junction temperature, making it suitable for harsh environments such as military