JAN2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by JAN

JAN2N3019S-Transistor Overview

The JAN2N3019S transistor is a high-performance NPN bipolar junction transistor designed for rugged military and industrial applications. It offers dependable switching and amplification capabilities with a focus on reliability and stable operation under demanding conditions. With its robust maximum voltage and current ratings, it suits a variety of electronic circuits where durability and precision are essential. This transistor ensures consistent performance in both switching and linear amplification tasks, making it ideal for engineers and sourcing specialists seeking a trusted semiconductor solution. For detailed technical support, visit IC Manufacturer.

JAN2N3019S-Transistor Technical Specifications

JAN2N3019S-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 100 V, enabling use in high-voltage switching and amplifier circuits.
• Wide DC current gain range: Offers h_FE between 40 and 160, providing flexibility for various amplification needs with stable gain characteristics.
• Metal TO-18 package: Ensures enhanced thermal dissipation and mechanical robustness, improving reliability in harsh environments.
• High transition frequency: Operates effectively up to 100 MHz, suitable for medium-frequency analog and switching applications.

Typical Applications

• Signal amplification in audio and radio frequency circuits where stable gain and low noise are critical.
• Switching components in power control circuits for industrial machinery and instrumentation.
• Military and aerospace electronics requiring components qualified to stringent environmental and electrical standards.
• General-purpose amplification and switching in rugged electronic systems with demanding reliability requirements.

JAN2N3019S-Transistor Advantages vs Typical Alternatives

This transistor provides superior voltage and current handling compared to standard low-power transistors, offering enhanced reliability for industrial and military-grade applications. Its metal TO-18 package improves thermal management and durability, making it a preferred choice where long-term stability and ruggedness are crucial. The broad current gain range and high transition frequency further contribute to its adaptability across various circuit designs, delivering consistent performance with low noise and efficient switching capability.

JAN2N3019S-Transistor Brand Info

The JAN2N3019S is a military-grade transistor originally produced under the JAN (Joint Army-Navy) standard, which certifies electronic components for rigorous defense and aerospace applications. Typically manufactured by established semiconductor suppliers specializing in high-reliability discrete devices, this transistor meets strict quality and performance standards. It is commonly sourced through reputable distributors who provide components with traceability and certification, ensuring suitability for mission-critical electronics and industrial control systems.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current (I_C) for this transistor is rated at 800 mA, making it suitable for moderate power amplification and switching tasks without exceeding thermal or electrical limits.

Can this transistor be used in RF applications?

Yes, with a transition frequency of approximately 100 MHz, this device is capable of functioning in medium-frequency RF applications, including signal amplification and switching in communication circuits.

What package does this transistor use, and why is it important?

This transistor is housed in a TO-18 metal can package