JAN2N3019-Transistor Overview
The JAN2N3019 transistor is a robust NPN silicon bipolar junction transistor designed for medium power amplification and switching applications. Featuring a high voltage rating and moderate current handling capability, it is suited for use in industrial and military-grade circuits. Its reliable performance under varying temperature conditions makes it a preferred choice for engineers seeking durability and consistent gain characteristics. The device offers a balance of gain, voltage, and current specifications, making it adaptable for analog signal processing and driver stage applications. For sourcing and detailed product insights, visit IC Manufacturer.
JAN2N3019-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | Volts |
| Collector-Base Voltage (VCBO) | 100 | Volts |
| Emitter-Base Voltage (VEBO) | 5 | Volts |
| Collector Current (IC) | 1 | Amperes |
| Power Dissipation (PD) | 30 | Watts |
| DC Current Gain (hFE) | 40 to 320 | Unitless |
| Transition Frequency (fT) | 40 | MHz |
| Package Type | TO-18 Metal Can | – |
JAN2N3019-Transistor Key Features
- High Voltage Tolerance: Supports up to 100V collector-base voltage, enabling use in high-voltage switching circuits.
- Moderate Current Handling: Handles collector currents up to 1A, suitable for medium power applications without thermal overstress.
- Wide Gain Range: DC current gain from 40 to 320 allows flexible biasing and amplification control in analog circuits.
- Reliable Packaging: TO-18 metal can package provides enhanced thermal conductivity and mechanical durability for industrial environments.
Typical Applications
- Signal amplification in audio and instrumentation circuits requiring stable gain and moderate power handling.
- Switching in relay driver circuits and medium power control systems where voltage and current demands align with device ratings.
- Use in voltage regulators and power management modules, benefiting from its thermal stability and gain characteristics.
- Military and aerospace electronics demanding rugged components with proven reliability and consistent electrical performance.
JAN2N3019-Transistor Advantages vs Typical Alternatives
This transistor offers notable advantages over typical alternatives by combining a high collector-base voltage rating with moderate current capacity, ensuring reliable operation in demanding switching and amplification roles. Its wide DC gain range provides design flexibility, while the TO-18 metal can package enhances thermal dissipation and mechanical robustness. These features contribute to superior reliability and efficiency in industrial and military applications compared to standard plastic-encapsulated transistors.
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JAN2N3019-Transistor Brand Info
The JAN2N3019 transistor is a JEDEC registered device originally specified for military and aerospace applications. It is manufactured under stringent quality standards by multiple reputable semiconductor producers, including those specializing in military-grade components. The JAN prefix signifies compliance with Joint Army-Navy (JAN) certification, ensuring high reliability and durability under harsh operating conditions. This transistor is widely recognized for its dependable performance and is a trusted component in legacy and contemporary industrial designs.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for this transistor is 1 ampere. This allows it to handle medium power loads typical in switching and amplification applications without thermal failure when properly mounted.
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Can this transistor operate at high voltages safely?
Yes, it is rated for a collector






