JAN2N2945AUB/TR Overview
The JAN2N2945AUB/TR is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring enhanced reliability and robust switching capabilities. It features a complementary PNP transistor counterpart, making it ideal for push-pull amplifier configurations, switching circuits, and high-speed amplification tasks. The device is housed in a TO-18 metal can package ensuring excellent thermal conductivity and mechanical durability. Manufactured under stringent military standards, this transistor supports operations across a wide temperature range, providing dependable performance in harsh environments. For sourcing and technical details, visit IC Manufacturer.
JAN2N2945AUB/TR Key Features
- High Current Gain: Provides reliable amplification with a minimum DC current gain (hFE) ensuring consistent signal integrity in amplification and switching applications.
- Low Saturation Voltage: Enables efficient switching with minimal power loss, improving overall circuit efficiency and reducing thermal stress.
- Wide Operating Temperature Range: Supports military temperature specifications from -55??C to +125??C, suitable for aerospace and defense electronics.
- TO-18 Hermetic Package: Ensures superior protection against moisture and contaminants, enhancing long-term reliability in demanding environments.
JAN2N2945AUB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V (max) |
| Collector Current (IC) | 600 mA (max) |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Transition Frequency (fT) | ?? 50 MHz |
| Power Dissipation (PC) | 625 mW (max) |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | TO-18 Hermetic Metal Can |
| Collector-Base Voltage (VCBO) | 100 V (max) |
JAN2N2945AUB/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and performance under extreme environmental conditions compared to typical commercial transistors. Its hermetic TO-18 package and military-grade testing ensure longevity and consistent gain over temperature extremes. Lower saturation voltage and high transition frequency improve efficiency and switching speed, making it a preferred choice for aerospace, military, and industrial electronics where durability and precision are critical.
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Typical Applications
- High-speed switching circuits in aerospace and defense systems, where reliability and fast response times are essential for mission-critical operations.
- Push-pull amplifier stages requiring matched NPN and PNP transistor pairs for balanced signal amplification.
- Industrial control systems that operate in harsh temperature environments demanding robust transistor performance.
- Signal processing circuits within communications equipment, benefiting from stable gain and low noise characteristics.
JAN2N2945AUB/TR Brand Info
The JAN2N2945AUB/TR is part of a specialized product line adhering to military standards for transistors, emphasizing enhanced reliability and rigorous quality control. This product is manufactured to meet stringent defense and aerospace requirements, providing engineers with a trusted component for critical applications. Its proven design and packaging ensure consistent performance, solidifying its position within industrial and military semiconductor portfolios.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is rated at 600 mA. This ensures it can handle moderate power switching and amplification tasks without risk of damage under specified operating conditions.
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What temperature range can the transistor reliably operate in?
This device is specified to operate reliably from -55??C to +125??C, making it suitable for demanding environments such as aerospace, military, and industrial applications where temperature extremes are common.
What package type does the transistor use, and why is it important?
The transistor is housed in a TO-18 hermetic metal can package. This packaging provides excellent protection against moisture and contaminants, enhancing durability and thermal performance for long-term reliability in harsh conditions.
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How does the DC current gain (hFE) vary for this transistor?
The DC current gain ranges from 40 to 160 depending on test conditions, providing flexibility for various circuit designs requiring moderate to high gain with stable performance.
Can this transistor be used in high-frequency applications?
Yes, with a transition frequency of 50 MHz or higher, this transistor is suitable for many high-frequency applications including signal processing and communication circuits, offering reliable amplification at these frequencies.






