JAN2N2920A-Dual-Transistor Overview
The JAN2N2920A-Dual-Transistor is a high-performance bipolar junction transistor (BJT) device designed for demanding analog and switching applications. Featuring two matched transistors in a single package, it provides improved circuit symmetry and enhanced signal integrity. Engineered for military and industrial-grade reliability, it supports a wide range of voltage and current requirements, making it ideal for amplification, switching, and driver stages. This dual transistor device combines robust electrical characteristics with precise gain parameters, ensuring consistent operation in critical systems. For detailed sourcing and technical data, visit IC Manufacturer.
JAN2N2920A-Dual-Transistor Key Features
- Dual-transistor configuration: Offers matched transistor pairs within a single package, enabling balanced amplifier designs and reducing component count.
- High voltage capability: Supports collector-emitter voltages up to 250V, suitable for high-voltage analog circuits and power switching applications.
- Reliable military-grade construction: Built to meet stringent reliability standards, ensuring stable performance in harsh environments.
- Consistent current gain (hFE): Provides predictable gain characteristics essential for precision analog circuitry.
JAN2N2920A-Dual-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 250 | V |
| Collector-Base Voltage (VCBO) | 300 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 800 | mW |
| DC Current Gain (hFE) | 40 to 300 | ?C |
| Transition Frequency (fT) | 50 | MHz |
| Operating Temperature Range | -55 to +125 | ??C |
JAN2N2920A-Dual-Transistor Advantages vs Typical Alternatives
This dual-transistor device excels over typical single-transistor alternatives by providing matched transistor pairs in one package, enhancing circuit balance and reducing assembly complexity. Its high voltage tolerance and stable gain parameters ensure reliable operation in high-voltage and precision analog applications. Additionally, the military-grade quality ensures superior robustness and longevity compared to commercial-grade transistors, making it a preferred choice for critical industrial and defense electronics.
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Typical Applications
- Differential amplifiers and matched transistor circuits benefit from the dual-transistor configuration, improving signal symmetry and reducing offset errors in precision analog designs.
- Switching regulators where high voltage and reliable switching characteristics are necessary for efficient power management.
- Driver stages in industrial control systems requiring stable gain and high voltage capability to drive larger loads.
- Signal amplification in instrumentation and measurement equipment where low noise and consistent transistor characteristics are essential.
JAN2N2920A-Dual-Transistor Brand Info
The JAN2N2920A-Dual-Transistor is a robust bipolar transistor device manufactured to military-grade standards, ensuring high reliability and performance in extreme environments. This product is designed and tested for durability, enabling engineers to trust its consistent operation in defense, aerospace, and industrial applications. Its dual-transistor design in a compact TO-18 metal can package reflects a commitment to quality and precision manufacturing, aligning with stringent defense electronics requirements.
FAQ
What is the maximum collector current for this dual transistor device?
The maximum collector current rating is 600mA per transistor, allowing it to handle moderate load currents in amplification and switching applications without compromising reliability.
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Can this transistor operate at high temperatures?
Yes, the device is rated for an operating temperature range from -55??C up to +125??C, making it suitable for harsh environmental conditions commonly encountered in military and industrial applications.
How does the dual-transistor configuration benefit circuit design?
By integrating two matched transistors in one package, the device simplifies layout for differential amplifier circuits and other matched-pair applications, improving signal symmetry and reducing component count.
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What packaging type is used for this transistor?
This transistor is housed in a TO-18 metal can package, offering excellent thermal conductivity and mechanical robustness, which is essential for reliable operation in demanding environments.
Is the current gain (hFE) consistent across devices?
The device provides a DC current gain range of 40 to 300, ensuring predictable and consistent gain characteristics necessary for precision analog circuit design and performance stability.
